Screen Holdings Co., Ltd.

Toru Momma

Koji Nishi

Hiroyuki Ogura

Masahito Kashiyama

Shogo Yoshida

Shoji Kirita

Junki Nishimura

Koji Nishiyama

Ryuichi Yoshida

Shigehiro Goto

Atsushi Tanaka

Hidetoshi Sagawa

Chikara Sagae

Hiromi Murachi

Tadashi Miyagi

Yasuhiro Fukumoto

Kenichiro Jo

Yukihiko Inagaki

Hiroyuki Takeuchi

Satoshi Yamamoto

A treating solution supply apparatus which supplies a treating solution for treating a substrate includes a liquid passage for allowing the treating solution to flow therethrough; and a pump including a chamber with a variable volume for receiving and feeding the treating solution from/to the liquid passage, and a chamber driver electrically driven to vary the volume of the chamber. The liquid passage, chamber, and chamber driver are arranged in the stated order laterally.

Treating solution supply apparatus

In a substrate cleaning device, with a polishing head in contact with one surface of a substrate rotated by a spin chuck, the polishing head is moved at least between a center and an outer periphery of the substrate. Thus, the one surface of the substrate is polished by the polishing head, and contaminants present on the one surface of the substrate are removed. At this time, capacity for removing contaminants by the polishing head is changed according to a position in a radial direction of the substrate. The capacity for removing contaminants refers to capacity for scraping contaminants adhering to the one surface of the substrate, and suction marks, contact marks and the like remaining on the one surface of the substrate by polishing. It is possible to change the capacity for removing contaminants by adjusting a pushing force exerted on the one surface of the substrate from the polishing head, for example.

Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method

A chamber has a first opening, a second opening, and a third opening. The second opening is higher in level than the first and third openings, and is located at the highest position of a reservoir. Air bubbles are easily collected around the second opening, higher in level than the third opening, due to buoyancy. Moreover, the chamber includes an upper slope on an upper inner wall thereof such that a sectional area of the chamber becomes smaller toward the highest position of the reservoir. The upper slope causes the air bubbles not to stagnate but to be guided to the second opening along the upper slope. This makes easy discharge of the air bubbles from the chamber.

Pumping apparatus, treatment solution supplying device, and substrate treating apparatus

A chamber has at least three openings, or a first opening, a second opening, and a third opening formed therein that are in communication with a reservoir. The second opening is higher in level than the first opening. The third opening is used for discharging a liquid within the reservoir by introducing gas through at least one of the first opening and the second opening into the reservoir. Since the third opening is the lowest in level among the three openings, the liquid stored in the reservoir is able to be drained easily.

Pumping apparatus, treatment solution supplying device, substrate treating apparatus, liquid draining method, and liquid replacing method

A rotating substrate is cleaned by a polishing head and a cleaning brush. A first trajectory is formed by movement of the polishing head along a first path. A second trajectory is formed by movement of the cleaning brush along a second path. A region in which the first and second paths overlap with each other is defined as an interference region. The polishing head moves from a center towards an outer peripheral end of the substrate, and it is determined whether the polishing head has moved out of the interference region. At a time point at which it is determined that the polishing head has moved out of the interference region, the cleaning brush starts moving from the outer peripheral end towards the center of the substrate.

Substrate cleaning device, substrate processing apparatus and substrate cleaning method

A treating liquid vaporizing apparatus includes a buffer tank for storing a treating liquid, a vaporizing container connected to the buffer tank for vaporizing the treating liquid, a further vaporizing container connected to the buffer tank in parallel with the vaporizing container for vaporizing the treating liquid, a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the vaporizing container, and a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the further vaporizing container.

Treating liquid vaporizing apparatus

A pumping apparatus includes a pump chamber, a piston, a motor, and a controller. The controller determines an imaginary terminal point by referring to a dispense command, theoretical information, and a current position of the piston. The controller corrects the imaginary terminal point to a target position by referring to a correction graph. The controller outputs a drive command to the motor for moving the piston from a start position to the target position.

Pumping apparatus and substrate treating apparatus

An upper plate on which a substrate is placed is cooled or heated by a thermal processor. The temperature of the thermal processor is adjusted by a temperature adjuster. The temperature of the upper plate is detected. A control value that is to be applied to the temperature adjuster in order to maintain the temperature of the upper plate at a set value is calculated as a control arithmetic value on the basis of the detected temperature. When the control arithmetic value decreases to a value less than a second threshold value, a first control that applies the control arithmetic value to the temperature adjuster is performed. When the control arithmetic value increases to a value not less than a first threshold value, a second control that applies a control set value higher than the control arithmetic value to the temperature adjuster is performed.

Thermal processing apparatus and thermal processing method

A substrate cleaning device includes a cleaning brush having a circular upper end surface, and cleans a lower surface of a substrate by bringing the upper end surface of the cleaning brush into contact with the lower surface of the substrate rotated by a spin chuck. A space forming member is provided for cleaning of the cleaning brush. The space forming member has a lower end surface. Further, the space forming member has a circular opening in a lower end surface and forms an inner space. A cleaning liquid is supplied to the inner space of the space forming member with the circular opening closed by the upper end surface of the cleaning brush, whereby the cleaning liquid is allowed to flow out from the inner space through the circular opening and a gap between the upper end surface of the cleaning brush and the lower end surface of the space forming member.

Substrate cleaning device and substrate processing apparatus including the same

With a cover member being located directly upward of an opening of a casing, a substrate in a horizontal attitude is carried into a gap between the cover member and the opening. The carried-in substrate is moved to the inside of the casing through the opening. The cover member is lowered, so that the opening is closed. An inert gas is supplied to the inside of the casing. One surface of the substrate is irradiated with vacuum ultraviolet rays by a light emitter while the substrate is moved in a horizontal direction in the casing. The cover member is lifted, so that the opening is opened. The substrate is moved to a position between the cover member and the opening from a position inside of the casing through the opening. Thereafter, the substrate in the horizontal attitude is taken out in the horizontal direction.

Exposure device and substrate processing apparatus

Substrate treating apparatus including a cover that covers a substrate on a plate. The cover undersurface is substantially horizontal and adjacent to a surface of the substrate. Through a gas flow path, a treatment gas is supplied to the substrate. The gas flow path includes a swirl chamber, a diameter contraction chamber, and a diameter expansion chamber. In the swirl chamber, the treatment gas flows around the central axis. The diameter contraction chamber is disposed below and in communication with the swirl chamber, and has an inner diameter that decreases from its upper end toward its lower end. The diameter expansion chamber is disposed below and in communication with the diameter contraction chamber, and has an inner diameter that increases from its upper end toward its lower end. The lower end of the diameter expansion chamber includes an opening on the undersurface of the cover.

Substrate treating apparatus and treatment gas supplying nozzle

A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position forward of the light emitter. A substrate on which a DSA film is formed is placed on an upper surface of the local transport hand. Vacuum ultraviolet rays having strip-shape cross sections are emitted from the light emitter to cross a moving path of the local transport hand. The local transport hand is moved from the front position to the rear position such that the DSA film on the substrate is irradiated with the vacuum ultraviolet rays emitted by the light emitter. At this time, a moving speed of the substrate is controlled, so that an exposure value for the DSA film formed on the substrate is adjusted.

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Kyoto, Japan

Toru Momma