Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Toru Kagaya

Masanori Sakai

Kazuyuki Okuda

Yasushi Yagi

Shinya Ebata

Nobuhito Shima

Seiji Watanabe

Kazuyuki Toyoda

Yusaku Okajima

Hiroaki Hiramatsu

Taketoshi Sato

Nobuo Ishimaru

Tadashi Kontani

Yasuo Kunii

Yoshimasa Nagatomi

Hidenari Yoshida

Hirohisa Yamazaki

Atsushi Umekawa

Atsushi Hirano

Madoka Tanaka

There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container, wherein the gas injector includes at least one first injection hole installed along a longitudinal direction of the pipe in a section where the plurality of substrates is arranged, and configured to supply the gas, and a plurality of second injection holes having an area smaller than a flow path cross-sectional area of the pipe, and installed to be opened obliquely to the longitudinal direction at a tip of the pipe.

Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and gas injector

Gas injector for substrate processing apparatus

Protector for maintenance on semiconductor manufacturing equipments

Inlet liner for substrate processing apparatus

Inner tube of reactor for semiconductor fabrication

Gas nozzle for substrate processing apparatus

Reaction tube

Boat for substrate processing apparatus

A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O) are alternately fed into the reaction tubeto generate AlOfilm on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.

Substrate processing apparatus and producing method of semiconductor device

A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

Substrate processing apparatus

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Substrate processing apparatus and reaction container

Growing community of inventors

Tokyo, Japan

Toru Kagaya