Renesas Technology Corp.

Hitachi, Ltd.

Renesas Electronics Corporation

Other

Toru Fujioka

Isao Yoshida

Masatoshi Morikawa

Yoshikuni Matsunaga

Osamu Kagaya

Kenji Sekine

Mineo Katsueda

Satoshi Sakurai

Toshihiko Shimizu

Hideyuki Ono

Satoshi Goto

Masahito Numanami

Satoshi Tanaka

Hidetoshi Matsumoto

Tetsuaki Adachi

Masami Ohnishi

Masao Hotta

A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.

Semiconductor chip comprising a directional coupler having a specific main line and sub-line arrangement

The present invention is to provide a technique which optimizes a gate resistor of a bias circuit to thereby make it possible to greatly improve a distortion characteristic of a power amplifier. A bias circuit used as for biasing the gate of a final-stage power transistor is included in a power amplifier provided in a communication mobile system. In the bias circuit, an inductance and a resistor are series-connected between a power supply voltage and the gate of the power transistor. The resistance value of the resistor is set to approximately the same order as an input impedance of the power transistor. When the input impedance of the power transistor is about 10&#x3a9; or so, for example, the resistor is set to about a few &#x3a9; to about 100&#x3a9;. Thus, the gain of the power transistor at a low-frequency band can greatly be suppressed.

Semiconductor integrated circuit device

The RF power amplifier includes first and second amplifiers Qand Qas final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Qand Qare formed on one semiconductor chip. The first bias voltage Vgof the amplifier Qis set to be higher than the second bias voltage Vgof the amplifier Qso that the amplifier Qis operational between Class B and AB, and Qis operational in Class C. The first effective device size Wgqof the amplifier Qis intentionally set to be smaller than the second effective device size Wgqof the amplifier Qbeyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

RF power amplifier

Power amplifying semiconductor integrated circuit device for use in communication equipment

In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

Mobile telephone apparatus

It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.

Semiconductor device

A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f and second frequency f (f f ). It includes a drive stage amplifier having the gain peaks at f and f with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f , a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f and f

High-frequency power amplifier module

A high frequency power amplifier module is provided for improving output controllability. A wireless communication apparatus incorporates a high frequency power amplifier module in a multi-stage configuration including a plurality of cascaded MOSFETS. The power amplifier module comprises a bias circuit for generating a gate voltage in response to a power control voltage (vapc) generated based on a power control signal of the wireless communication apparatus. The gate voltage has a bias pattern which presents smaller fluctuations in output power in response to a control voltage (Vapc) in a region near a threshold voltage (Vth) of the MOSFETs in respective amplification stages. In this way, the controllability for the output power is improved. More specifically, the power amplifier module has a gate bias circuit for generating the gate voltage (Vg) which follows a gate voltage pattern. The gate voltage (Vg) supplied to a control terminal in response to the control voltage (Vapc) largely changes in a region where the gate voltage (Vg) is lower than the threshold voltage (Vth) of the respective MOSFETs, and slightly changes near the threshold voltage (Vth). Also, the gate voltage (Vg) presents desired characteristics from the vicinity of the threshold voltage (Vth) to a high Vapc voltage region.

High frequency power amplifying module and wireless communication apparatus

Mobile telephone system

Growing community of inventors

Kokubunji, Japan

Toru Fujioka