International Business Machines Corporation

Kabushiki Kaisha Toshiba

Other

Toru Asano

Sang Hoo Dhong

Osamu Takahashi

Takaaki Nakazato

Joel Abraham Silberman

Atsushi Kawasumi

Chad Allen Adams

Andrew Maust

A k-to-2decoder is provided. Within the final stage of a k-to-2decoder is a plurality of word line drivers. These word line drivers utilize clocking signals to fire word lines to a memory array. However, power consumption by clocks has become a serious issue with the increase component density on silicon wafers. To alleviate the problem, signals from the first stage of the k-to-2decoder provide enablement signals to Local Clock Buffers (LCBs) that allow the word line drivers to fire. The enablement signal reduces the number of active buffers and signals carried to word line drivers, reducing power consumption.

Self clock generation structure for low power local clock buffering decoder

A memory system including a memory array with redundant wordlines. The memory system includes a memory wordline tester that determines if any of the wordlines exhibits a defect. The memory system also includes decoder redundancy logic that efficiently couples to wordline shift logic using a reduced number of control signal lines therebetween. The shift logic shifts defective wordlines to upstream wordlines in the array to bypass the defective wordlines.

Method and apparatus for wordline redundancy control of memory in an information handling system

A method, an apparatus, and a computer program are provided to reduce the number of required latches in a deep pipeline wordline (WL) decoder. Traditionally, a signal local clock buffer (LCB) has been responsible for providing a driving signal to a WL driver. However, with this configuration, a large number of latches are utilized. To reduce this latch usage, a number of LCBs are employed, such that one latch can enable an increased number of WLs. Hence, the overall area occupied by latches is reduced and power consumption is reduced.

Apparatus and method of word line decoding for deep pipelined memory

Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.

SOI sense amplifier with cross-coupled body terminal

Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.

SOI sense amplifier with cross-coupled bit line structure

A sum decoder is disclosed including multiple sum predecoders, a carry generator, and multiple rotate logic units. Each sum predecoder receives multiple bit pairs of non-overlapping segments of a first and second address signal, and produces an input signal dependent upon the bit pairs. The carry generator receives a lower-ordered portion of the first and second address signals, and generates multiple carry signals each corresponding to a different one of the sum predecoders. Each rotate logic unit receives the input signal produced by a corresponding sum predecoders and a corresponding one of the carry signals, rotates the bits of the input signal dependent upon the carry signal, and produces either the input signal or the rotated input signal as an output signal. A memory is described including the sum decoder, a final decode block, and a data array. The final decode block performs logical operations on the output signals of the sum decoder to produce selection signals. Each of the selection signals activates a word line of the data array. A method is disclosed for producing signals for accessing a memory. Highest ordered portions of the first and second address signals are divided into multiple non-overlapping segments. An input signal (i.e., an I term) is generated for each of the segments, as is a carry signal. For each of the segments, when the corresponding carry signal is set, the corresponding I term is rotated one bit position. The I terms are produced as the signals.

Apparatus and method for generating memory access signals, and memory accessed using said signals

Disclosed is an apparatus for and a method of overcoming signal delay problems in a read-out path occurring in connection with pipelined memory circuits. A latch type sense amplifier (SA) is used to receive the memory cell logic levels during a pre-charge state in a cycle prior to read-out. Thus, the SA may quickly provide an output signal during a read latch clock cycle. The SA output is passed through a dynamically enabled logic circuit to a latch circuit for holding the receiving logic value for use in the next clock cycle.

Latch type sense amplifier method and apparatus

A decoder for use in wordline/bitline redundancy control is disclosed. In one aspect, the decoder includes first and second wordlines respectively coupled to redundant first and second wordlines, where the first and second wordlines are configured to be activated based on decoded first and second addresses. In addition, the decoder includes first and second shift registers respectively coupled to the redundant first and second wordlines, where each is configured to respectively activate the redundant first and second wordlines when the first or second wordlines contain a defect. In addition, a method of selecting wordlines for use in wordline/bitline redundancy control and a wordline decoder having redundancy control capabilities are also disclosed.

Apparatus and method of wordline/bitline redundancy control using shift registers in an SRAM

The present invention provides a subarray control apparatus and method. The subarray control includes a wordline driver configured to generate a wordline activation signal, and a write/read control signal generator configured to generate a write/read enable signal. In addition, the subarray control includes a timing generator configured to generate a wordline timing signal input to the wordline driver and a write/read timing signal input to the write/read control signal generator. The wordline activation signal is based on enable data captured by a first transparent latching circuit and the wordline timing signal generated within the subarray. The write/read enable signal is based on enable data captured by a second transparent latching circuit and the write/read timing signal generated within the subarray. Accessing subarray cells in a memory module and a memory module incorporating the subarray control are also disclosed.

Subarray control and subarray cell access in a memory module

A pulse generator circuit includes a first logic means, a second logic means, a first delay means, and a second delay means. The first logic means is for receiving an input clock signal. The first delay means is for delaying the input clock signal by a first delay time. The second logic means is for receiving a signal output from the first logic means. The second delay means is for delaying the signal output from the first logic means by a second delay time.

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Omihachiman, Japan

Toru Asano