Jsr Corporation

Sony Corporation

Nec Corporation

Tooru Kimura

Shin-ichiro Iwanaga

Fumihiro Toyokawa

Kouji Nishikawa

Junya Suzuki

Hiromitsu Nakashima

Yuji Shishido

Yuji Yada

Masayuki Motonari

Satoshi Iwamoto

Kazunori Takanashi

Shin-ya Nakafuji

Hiromitsu Tanaka

Toshio Hashimoto

Goji Wakamatsu

Tomohiro Utaka

Yuushi Matsumura

Sachiko Kaneko

Koji Nishikawa

Shunsuke Kurita

Tomoaki Seko

Jun'ichi Sone

Masafumi Kawanaka

Shingo Takasugi

Hiroko Nishimura

Shin-Ichiro Iwanaga

A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R, Rand Reach independently represent a group represented by the formula (a). In the formula (a), Rrepresents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. Rrepresents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. 

Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0&#xb0; C. Rand Reach independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. Rrepresents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of Rs are identical or different. 

Composition for forming resist underlayer film, and pattern-forming method

A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0&#xb0; C., and an organic solvent having a standard boiling point of no less than 150.0&#xb0; C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

A radiation-sensitive composition includes a polymer composition and a radiation-sensitive acid generator. The polymer composition includes a first polymer and a second polymer. The first polymer includes a repeating unit shown by a following formula (1). The second polymer includes a repeating unit shown by a following formula (2) and does not include a repeating unit shown by the formula (1). 

Radiation-sensitive composition

A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0&#xb0; C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Composition for forming resist underlayer film and pattern-forming method

It is an object of the present invention to provide a process capable of precisely producing a plated shaped article of a large thickness such as a bump or a wiring, a negative radiation-sensitive resin composition which is preferably used for the process and has excellent sensitivity and resolution, and a transfer film using the composition. The above object is achieved by a negative radiation-sensitive resin composition comprising (A) a polymer containing structural units represented by the following formula (1) and/or the following formula (2), (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation-sensitive radical polymerization initiator, and by forming a negative radiation-sensitive resin film using the composition. 

Negative radiation-sensitive resin composition

A fan motor having a small thickness and its impeller's blades formed to have a longer length in the diametrical direction than a width in the axial direction. Since the blade of the fan motor has a tooth structure or chamfers at its edge end in the diametrical direction, turbulence is forcibly evoked in an airflow to promote the turbulent diffusion, thereby suppressing the trailing vortex and reducing the aerodynamic noises, and thus the ventilation efficiency is improved.

Fan motor

The photosensitive resin film in an uncured state of the invention comprises (A) a specific alkali-soluble copolymer, (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation-sensitive radical polymerization initiator by the use of which a coating film having a dry film thickness of 70 &#x3bc;m in an uncured state has a 365 nm radiation transmittance of not less than 10% and a 405 nm radiation transmittance of not less than 60%, contains the radiation-sensitive radical polymerization initiator (C) in an amount of 20 to 40 parts by weight based on 100 parts by weight of the component (A), and has a dry film thickness of not less than 50 &#x3bc;m. According to the photosensitive resin film, a high bump having a height of not less than 50 &#x3bc;m can be readily formed on a chip substrate with high precision though formation of such a high bump is difficult by the conventional technique. Moreover, connection failure of an element can be inhibited, and reliability of an element can be enhanced.

Photosensitive resin film and cured film made therefrom

A radiation-sensitive resin composition comprising (A) an alkali-soluble resin having an unsaturated group, (B) a compound having at least one ethylenically unsaturated double bond, and (C) a radiation-induced radical polymerization initiator, wherein: The resin composition can form a radiation-sensitive film in a thickness greater than a deposit thickness and has a high resolution.

Radiation-sensitive resin composition

A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body using as an emitter region in a high vacuum of 10.sup.-9 torr to 10.sup.-13 torr at a first temperature of 400.degree. C. to 1,000.degree. C. where arsenic on a surface of the gallium arsenide body drifts away, lowering the first temperature to a second temperature of 300.degree. C. to 400.degree. C. to start a molecular beam epitaxial growth of a germanium, and forming an N-type germanium layer using as a collector region.

Growing community of inventors

Tokyo, Japan

Tooru Kimura