Hwatsing Technology Co., Ltd.

Tsinghua University

Tongqing Wang

Xinchun Lu

Zhenjie Xu

Jian Wang

Jianbin Luo

Pan Shen

Yongyong He

Dewen Zhao

Kun Li

Qingbo Liang

Hegeng Mei

Xiangyu Chen

Lianqing Zhang

Zhaohui Pei

Haiyang Xu

Rui Tan

Hui Ci

A monitoring method and a device for chemical mechanical polishing are provided. The method includes: loading a to-be-polished wafer with a carrier, attaching the wafer to a polishing pad on a polishing platen, and supplying slurry between the polishing pad and the wafer with a slurry supply apparatus; conditioning the polishing pad with a conditioner, and obtaining strain data of the conditioner, wherein the conditioner includes a drive arm and a conditioning head, the conditioning head conditions the polishing pad with the support of the drive arm, the drive arm undergoes a strain in response to a force applied by the the conditioning head, and the strain data is used to indicate a strain value of the drive arm; determining a conditioning deviation based on the strain data, and determining a wear state of the polishing pad based on the conditioning deviation.

Monitoring method for chemical mechanical polishing and chemical mechanical polishing device

An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Apparatus for chemical-mechanical polishing

A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a 'thickness' direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same

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Tianjin, China

Tongqing Wang