Tokyo Electron Limited

Tong Wu

Tomohide Minami

Hiroki Endo

Kenji Nagai

Masaaki Miyagawa

Takayuki Hatanaka

Yoshihiro Yanagi

Satoshi Nomura

A plasma processing apparatus includes a plasma processing chamber; a base; an electrostatic chuck; a plurality of electrode layers disposed in the same plane within the electrostatic chuck; a switch group including a plurality of first switches electrically connected to the electrode layers, respectively; a power supply and a measurement unit that are electrically connected to the switch group; a second switch that selects either the power supply or the measurement unit as a connection destination of the switch group; and a controller. The power supply includes a power source that supplies a power to the electrode layers. The measurement unit includes a resistor and a voltmeter that measures a voltage applied to the resistor. The controller is capable of executing a control operation that includes switching the connection destination of the switch group to the measurement unit and then turning ON the plurality of first switches one by one.

Plasma processing apparatus and plasma processing method

A measuring device and an optical fiber strain measuring jig thereof appropriately measure an attraction force distribution on a wafer held by an electrostatic chuck. The measuring jig includes a substrate configured to be held by the electrostatic chuck; and an optical fiber including therein reflection elements capable of reflecting light having a wavelength corresponding to strain of the substrate due to stress, and fixed to one surface of the substrate in a state in which the reflection elements are disposed at plural positions, respectively, on the one surface of the substrate.

Measuring device and optical fiber strain measuring jig thereof

A measurement method performed by a semiconductor manufacturing apparatus including a chamber is provided. In the measurement method, first measurement data including a signal of a resonance frequency of the chamber is acquired as reference data, in response to transmitting an electrical signal into the chamber while a jig capable of performing wireless communication is not placed in the chamber. Subsequently, second measurement data including the signal of the resonance frequency of the chamber and including a signal of a resonance frequency of a sensor installed in the jig is acquired, in response to transmitting an electrical signal into the chamber while the jig is placed in the chamber. By subtracting the reference data from the second measurement data, third measurement data is calculated.

Measurement method and measurement system

A temperature measurement sensor according to an exemplary embodiment includes a substrate and an optical fiber provided on an upper surface of the substrate and extending along the upper surface. The temperature measurement sensor further includes a light introduction path of a space that allows a space above the upper surface and a space below a lower surface of the substrate to communicate with each other and an optical coupling portion provided on the upper surface and disposed in the light introduction path. The optical coupling portion is optically connected to the end surface of the optical fiber. The optical fiber forms the first pattern shape and the second pattern shape. The first pattern shape includes the optical fiber more densely than the second pattern shape. Light incident on the optical coupling portion from a side of the lower surface through the light introduction path reaches the end surface through the optical coupling portion.

Temperature measurement sensor, temperature measurement system, and temperature measurement method

A temperature measurement system configured to measure a temperature of a target object having a first main surface and a second main surface includes a light source unit configured to emit output light penetrating the target object and including a first wavelength range and a second wavelength range; a measurement unit configured to measure a spectrum of reflected light; an optical path length ratio calculator configured to calculate an optical path length ratio between the output light of the first wavelength range and the output light of the second wavelength range; and a temperature calculator configured to calculate the temperature of the target object based on the optical path length ratio and a previously investigated relationship between the temperature of the target object and a refractive index ratio between the output light of the first wavelength range and the output light of the second wavelength range.

Temperature measurement system and temperature measurement method

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Reduced interference, real-time sensing of properties in manufacturing equipment

An antenna device according to an exemplary embodiment includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer has a thermal conductivity and heat resistance that are higher than those of an FR-4 resin. The antenna device includes a first metal terminal and a second metal terminal, and a thermosensor. A pair of an input terminal and an output terminal of the thermosensor are electrically connected to the first metal terminal and the second metal terminal, respectively, and the second metal layer includes a first segment and a second segment. The first metal terminal is disposed above the first segment, and the second metal terminal is disposed above the second segment.

Growing community of inventors

Miyagi, Japan

Tong Wu