Tokyo Electron Limited

Tomoyuki Sakoda

Hideaki Yamasaki

Genji Nakamura

Gert J Leusink

Mikio Suzuki

Masayuki Nasu

Shigeo Ashigaki

A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.

Method of integrating metal-containing films into semiconductor devices

A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa.

Method for manufacturing semiconductor device and computer storage medium

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Kai, Japan

Tomoyuki Sakoda