Tokyo Electron Limited

Tomoyuki Oishi

Yoshihide Kihara

Toru Hisamatsu

Masanobu Honda

Alok Ranjan

Yun Han

Peter E Biolsi

Ken Kobayashi

Shuhei Ogawa

A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.

Etching of polycrystalline semiconductors

According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK) with plasma generated in a processing container (), in the processing container () of a plasma processing apparatus () in which the wafer (W) is accommodated, and the step includes steps STto STof conformally forming a protective film (SX) on the surface of the mask (MK), and steps STto STof etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK) on which the protective film (SX) is formed.

Method for processing workpiece

According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK, and a method MT according to an embodiment includes a step of performing an etching process on the antireflection film AL by using the mask MKwith plasma generated in a processing container, in the processing containerof a plasma processing apparatusin which the wafer W is accommodated, and the step includes steps STto STof conformally forming a protective film SX on the surface of the mask MK, and steps STto STof etching the antireflection film AL by removing the antireflection film AL for each atomic layer by using the mask MKon which the protective film SX is formed.

Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.

Method of processing target object

A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.

Method for processing target object

A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

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Miyagi, Japan

Tomoyuki Oishi