Tokyo Electron Limited

Tomoyuki Nagata

Takahiro Miyahara

Tomoyuki Obu

Masayuki Kitamura

Shingo Hishiya

Hirofumi Kaneko

Tomoya Hasegawa

Kazuo Yabe

Eiji Kikama

Tatsuya Miyahara

Nobutoshi Terasawa

Motoshi Fukudome

Fumiaki Nagai

Yuki Tanabe

Hiroaki Kikuchi

Kazuaki Sasaki

An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

Abnormality detection method and processing apparatus

There is provided an injector that extends in a longitudinal direction, including: a gas introduction part having a circular or a regular polygonal shape in a cross section perpendicular to the longitudinal direction and having no discharge holes; and a gas supply part having a protruded portion in one direction in the cross section perpendicular to the longitudinal direction, and having a plurality of discharge holes formed in a leading end of the protruded portion along the longitudinal direction, wherein a first end of the gas supply part in the longitudinal direction is connected to the gas introduction portion.

Injector and substrate processing apparatus using the same, and substrate processing method

There is provided a substrate processing apparatus, including: a cylindrical reaction tube having a lower end opening; a lid configured to open and close the lower end opening of the reaction tube; a substrate holder mounted on the lid and configured to hold a plurality of substrates at vertical intervals in multiple stages; and an inner tube mounted on the lid and configured to cover the substrate holder.

Substrate processing apparatus, substrate loading method, and substrate processing method

A substrate processing apparatus includes: a substrate holder which holds a plurality of substrates; a processing vessel including an inner tube and an outer tube disposed outside the inner tube; a gas supply part which supplies a process gas in parallel to target surfaces of the substrates; an exhaust part which exhausts the process gas from the processing vessel through a gas outlet; an exhaust port formed in the inner tube; and a rectifying plate installed in an outer wall of the inner tube or an inner wall of the outer tube between the exhaust port and the gas outlet in a circumferential direction of the processing vessel. The rectifying plate is installed to extend upward from a position below a lower end of the substrate holder to a location corresponding at least to a lower end of the exhaust port.

Substrate processing apparatus

There is provided a wafer boat support table that supports a wafer boat having a plurality of posts from below, the plurality of posts being configured to arrange and support a plurality of wafers at intervals in a vertical direction, the wafer boat support table including: a plurality of support points installed on each of linear lines defined by connecting a center of the wafer boat and the plurality of posts and configured to support a bottom surface of the wafer boat while being brought into contact with the bottom surface of the wafer boat.

Wafer boat support table and heat treatment apparatus using the same

Reactor tube for semiconductor production devices

Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Method of forming silicon film

Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Growing community of inventors

Oshu, Japan

Tomoyuki Nagata