Tokyo Electron Limited

Tomoyo Yamaguchi

Takashi Fuse

Kiwamu Fujimoto

Masanobu Honda

Kazuya Nagaseki

Akinori Kitamura

Takashi Enomoto

Akiteru Koh

Hiroharu Ito

An object to be process has a structure having an SiC filmand an organic Si-low dielectric constant filmformed on the SiC film. The SiC filmis etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant filmas a mask. The etching gas contains CHFor CHF.

Method for etching an object to be processed

A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with Hplasma to improve plasma resistance of the organic layer.

Plasma processing method

An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CHFor CHF.

Method for etching object to be processed

A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiOand an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF; CHFand N, for example, a mixed gas of CHF, Nand Ar; or a material having C, H and F and a material having N but without any material having O.

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Nirasaki, Japan

Tomoyo Yamaguchi