Tokyo Electron Limited

Tomoya Okubo

Akitaka Shimizu

Hiroyuki Ogawa

Chishio Koshimizu

Jun Hirose

Kazuki Denpoh

Shosuke Endoh

Koichi Nagakura

Hideki Tanaka

Noriyuki Iwabuchi

Hajime Furuya

Shigeaki Kato

Ryoko Kobayashi

In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

Substrate processing apparatus and substrate processing method

In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Plasma processing apparatus, focus ring, and susceptor

A method of resetting a substrate processing apparatus having a chamber which is capable of carrying out abnormality judgment on the substrate processing apparatus accurately without causing a decrease in the utilization ratio of the substrate processing apparatus. The chamber is evacuated. A temperature in the chamber is set. Whether or not there is an abnormality in the chamber is judged. An atmosphere in the chamber is stabilized so as to conform to predetermined processing conditions. At least one selected from data that change in response to a change in a state inside the chamber is measured. The measured data is compared with reference data that corresponds to the measured data for a normal state in the chamber.

Method of resetting substrate processing apparatus, storage medium storing program for implementing the method, and substrate processing apparatus

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Yamanashi, Japan

Tomoya Okubo