Kabushiki Kaisha Toshiba

Tomotoshi Inoue

Kenichi Tomita

Toshiyuki Terada

Kazuya Nishihori

Masami Nagaoka

Naotaka Uchitomi

Hitoshi Mikami

Misao Yoshimura

A method for forming wirings of an integrated circuit comprises a step of forming wirings on a substrate, a step of coating the wirings with a thin under metal layer, a step of coating the under metal layer with a mask except a part of the under metal layer, a first etching step of removing the under metal layer which is not coated by the mask to expose upper portions of at least ones of the wirings, an electroplating step of depositing a plating metal layer on the exposed upper portions, a step of removing the mask, and a second etching step of removing all of the remaining under metal layer, whereby said plating metal layer is formed by substantially same material as that of the exposed upper portions or by a material which can be closely contacted with the exposed upper portions and whereby said under metal layer is formed by a material which can be preferentially removed from the exposed upper portions.

Method of forming wirings for integrated circuits by electroplating

A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.

Metal semiconductor device and method for producing the same

A semiconductor device having an improved air-bridge lead structure is provided. The improved air-bridge lead structure has a higher mechanical strength and a lower electric resistance with a smaller electric capacitance.

Semiconductor device having an improved air-bridge lead structure

A highly reliable semiconductor integrated circuit device having a hollow multi-layered lead structure is provided. The device comprises lead-supporting columns that can securely support the multi-layered leads and can also efficiently radiate heat generated in operation.

Growing community of inventors

Kanagawa, Japan

Tomotoshi Inoue