Renesas Electronics Corporation

Tomoryo Shono

Hiroshi Nakano

Haruo Akahoshi

Takahiko Kato

Tetsuo Fujiwara

Itaru Kanno

Yuuji Takada

Yukinori Hirose

Yoshimi Sudo

A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.

Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus

Growing community of inventors

Kawanishi, Japan

Tomoryo Shono