Fujifilm Corporation

Tomoo Kato

Atsushi Mizutani

Hiroyuki Seki

Tadashi Inaba

Tomonori Takahashi

Kazutaka Takahashi

Hideo Fushimi

Masaru Yoshikawa

Katsuhiro Yamashita

Yoshinori Nishiwaki

Toshiyuki Saie

Takamitsu Tomiga

Kenji Takenouchi

Sumi Takamiya

Mihoko Ishima

A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Cleaning composition, cleaning process, and process for producing semiconductor device

A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Polishing liquid for metal and polishing method using the same

The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), Rrepresents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), Rrepresents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. 

Metal polishing composition and chemical mechanical polishing method

The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Metal-polishing liquid and chemical mechanical polishing method using the same

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Shizuoka-ken, Japan

Tomoo Kato