Rohm Co., Ltd.

Bridgestone Corporation

Tomonobu Hata

Akira Kamisawa

Kimihiro Sasaki

Masato Yoshikawa

Kazuo Naito

Toshio Honda

Yukihiro Kusano

Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.

Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride

Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed at the interface of the silicon substrate and the crystalline insulation layer. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer with an intervening amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic. Hence, it is possible to epitaxially grow an additional semiconductor layer or a crystalline ferroelectric layer on a surface of the crystalline insulation layer, which makes it possible to form a three dimensional semiconductor device, a composite semiconductor device, a high performance semiconductor memory device or the like. Thus, it is possible to obtain a semiconductor device which is new and highly integrated at an inexpensive cost.

Method of forming a crystalline insulation layer on a silicon substrate

A substrate is surface treated by a sputtering process by placing the substrate between a pair of targets which are located at a predetermined spacing in a sputtering apparatus, driving atoms out of both the targets, and depositing the atoms on the substrate to form a film thereon.

Surface treatment method

Growing community of inventors

Kanazawa, Japan

Tomonobu Hata