Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Tomoko Hamada

Akira Yonemizu

Nobukazu Ishizaka

Masatoshi Shiraishi

Kiyohisa Tateyama

Mitiaki Matsushita

The present invention provides a cleaning method in which an object to be cleaned is held such that a surface of the object to be cleaned faces a cleaning body and the object to be cleaned and the cleaning body are moved relative to each other in a state where the cleaning body is in contact with the surface to the object to be cleaned, thereby cleaning the surface of the object to be cleaned, wherein a contact pressure of the cleaning body to the surface of the object to be cleaned is set at most 20 gf/cm.sup.2, when the surface is cleaned.

Method of cleaning a substrate by scrubbing

A cleaning apparatus includes a spin chuck for holding and rotating a wafer, a brush for rubbing the surface of the wafer, and an arm for supporting the brush. A support is coupled to the arm through a linear guide. The arm and the support moves together in a horizontal direction and can relatively displace in a vertical direction. A compression spring is arranged between the arm and the support and deformed in accordance with a relative displacement of the arm and the support in the vertical direction. When the brush contacts the wafer held by the spin chuck, a biasing force of the brush against the wafer is generated in correspondence with deformation of the compression spring. The biasing force of the brush is set by adjusting the downward moving amount of the support in the vertical direction.

Cleaning apparatus

The present invention provides a cleaning apparatus having object holding means for holding an object to be cleaned such that a surface of the object to be cleaned faces a cleaning body and a cleaning mechanism for moving and rotating the cleaning body for cleaning the surface of the object to be cleaned, wherein the object to be cleaned and the cleaning body are moved relative to each other in a state where the cleaning body is in contact with the surface to the object to be cleaned at a specified contact pressure, thereby cleaning the surface of the object to be cleaned, the cleaning mechanism including a rotatable arm, cleaning body supporting means rotatably supporting a cleaning body, and elevating means, attached to the arm, for moving up and down the cleaning body supporting means.

Cleaning apparatus and cleaning method

Adhesion apparatus for applying a hydrophobic treatment to a semiconductor wafer comprises a tank housing a treating agent of liquid HMDS and a process chamber into which a mixed gas consisting of a vaporized HMDS coming from the tank and a carrier gas is supplied for applying a hydrophobic treatment to a wafer surface. A supporting table on which the wafer is disposed during the hydrophobic treatment is provided within the process chamber. A heater and a cooling water passageway are housed in the supporting table for controlling the wafer temperature. A concentration measuring section for measuring the HMDS concentration in the waste gas is connected to the discharge pipe of the process chamber. The concentration measuring section is connected to a CPU serving to derive a temperature control signal from the measured value of the HMDS concentration. The temperature control signal is transmitted to a temperature control section. Upon receipt of the temperature control signal, the temperature control section permits controlling the current supply to the heater or the cooling water supply to the cooling water passageway so as to change the temperature of the supporting table.

Growing community of inventors

Kumamoto-ken, Japan

Tomoko Hamada