Tokyo Electron Limited

Tomohito Ura

Satoshi Okamura

Shogo Fukui

Masataka Gosho

Shuuichi Nishikido

Noritaka Uchida

Nobuhiko Mouri

Takanori Obaru

Hidetaka Shinohara

Shu Yamamoto

Shingo Kamitomo

Masakazu Yarimitsu

Takeru Hirose

Yuya Motoyama

A substrate processing apparatus for drying a substrate by substituting a liquid film of a drying liquid formed on the substrate with a supercritical fluid incudes: a pressure container configured to accommodate the substrate on which the liquid film is formed; a discharge line configured to discharge a fluid inside the pressure container; a depressurizing valve provided in a middle of the discharge line; and a concentration measurement part configured to measure a concentration of vapor of the drying liquid in the fluid flowing through the discharge line, wherein the concentration measurement part is provided on a downstream side of the depressurizing valve of the discharge line and measures the concentration of the drying liquid in the fluid depressurized by the depressurizing valve.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unitstops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device

Substrate processing apparatus, substrate processing method and recording medium

A liquid residue on a bottom surface of a substrate can be reduced while placing the substrate accurately. A liquid processing apparatus includes an inclined portion, a plurality of supporting members, a processing liquid supply unit and a rotation unit. The inclined portion is provided under the substrate, and has an inclined surface which is inclined downwards from an outer side of the substrate toward an inner side thereof and is extended along a circumferential direction of the substrate. The supporting members are protruded from the inclined surface and configured to support the substrate from below. The processing liquid supply unit is configured to supply a processing liquid onto a top surface of the substrate. The rotation unit is configured to rotate the inclined portion. Further, each of the supporting members has a long narrow shape extended from the outer side of the substrate toward the inner side thereof.

Liquid processing apparatus

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Kumamoto, Japan

Tomohito Ura