Shin-etsu Chemical Co., Ltd.

Toppan Printing Co., Ltd.

Tomohito Hirose

Yukio Inazuki

Hideo Kaneko

Hiroki Yoshikawa

Takashi Haraguchi

Ryuji Koitabashi

Yosuke Kojima

A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm.

Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank

A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm.

Light pattern exposure method, photomask, and photomask blank

A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4&#xd7;C/100&#x2212;6&#xd7;C/100&#x3e;1 wherein Cis a silicon content in atom % and Cis a transition metal content in atom %.

Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film

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Tokyo, Japan

Tomohito Hirose