Jsr Corporation

International Business Machines Corporation

Jrs Corporation

Other

Tomohisa Konno

Toshihiro Tadaki

Yoshiyuki Udagawa

Hiroshi Akema

Masayuki Hattori

Mahadevaiyer Krishnan

Michael F Lofaro

Nobuo Kawahashi

Tatsuya Yamanaka

Jason E Cummings

Dinesh Kumar Penigalapati

Dinesh R Koli

Masahiro Noda

Leslie Charns

Lukasz J Hupka

Masayuki Motonari

Hirotaka Shida

Takashi Ando

Josephine B Chang

Michael A Guillorn

John Michael Cotte

Gaku Minamihaba

Nobuyuki Kurashima

Jakub W Nalaskowski

Kiyonobu Kubota

Kou Hasegawa

Kazuhiro Yanagisawa

Hajime Kondo

Hajime Kondou

Akihiro Takemura

Yuuji Namie

Takafumi Fueki

Kouhei Yoshio

Yoshikuni Tateyama

Yano Hiroyuki

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device

Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.

Chemical mechanical planarization with overburden mask

A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

Chemical mechanical planarization processes for fabrication of FinFET devices

Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.

Fabrication of replacement metal gate devices

A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.

Shallow trench isolation chemical mechanical planarization

The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.

Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device

Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m/g and less than 160 m/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.

Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method

The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.

Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing

An objective of the invention is to provide a rubber composition which has satisfactory processability and dimension stability, and the like, gives a vulcanized rubber exhibiting excellent wearing resistance and tensile strength, and the like, and thus is useful in a belt, a hose and a tire and the like, as well as a crosslinked rubber particle for obtaining such rubber composition. A rubber composition of the invention comprises [1] a crosslinked rubber particle comprising as repeating units (a) 30 to 94.89% by weight of a conjugated diene unit, (b) 5 to 69.89% by weight of an aromatic vinyl unit, (c) 0.01 to 10% by weight of a monomer unit having at least two polymerizable unsaturated group, (d) one polymerizable unsaturated group and an amino group, a hydroxyl group and an epoxy group and (e) 0.1 to 30% by weight of a monomer unit having one polymerizable unsaturated group and a carboxylic group and having a particle size of 10 to 500 nm and a toluene-insolubles of 80% by weight or more and [2] a non-crosslinked rubber component whose toluene-insolubles is less than 20% by weight.

Crosslinked rubber particles and rubber compositions

An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.

Window member for chemical mechanical polishing and polishing pad

An objective of the invention is to provide a rubber composition which has satisfactory processability and dimension stability, and the like, gives a vulcanized rubber exhibiting excellent wearing resistance and tensile strength, and the like, and thus is useful in a belt, a hose and a tire and the like, as well as a crosslinked rubber particle for obtaining such rubber composition. A rubber composition of the invention comprises &lsqb;1&rsqb; a crosslinked rubber particle comprising as repeating units (a) 30 to 94.89% by weight of a conjugated diene unit, (b) 5 to 69.89% by weight of an aromatic vinyl unit, (c) 0.01 to 10% by weight of a monomer unit having at least two polymerizable unsaturated group, (d) one polymerizable unsaturated group and an amino group, a hydroxyl group and an epoxy group and (e) 0.1 to 30% by weight of a monomer unit having one polymerizable unsaturated group and a carboxylic group and having a particle size of 10 to 500 nm and a toluene-insolubles of 80% by weight or more and &lsqb;2&rsqb; a non-crosslinked rubber component whose toluene-insolubles is less than 20% by weight.

The object of the present invention is to provide a method for producing a diene-based rubber/inorganic compound complex capable of allowing a silicic acid compound including silica and the like to be dispersed uniformly and allowing a reinforcing effect to be exerted sufficiently, and a rubber composition containing said complex. A latex comprising a diene-based rubber such as styrene-butadiene copolymeric rubber, butadiene-styrene-isoprene copolymeric rubber and the like is mixed with an aqueous solution of a silicate in which an alkaline salt of silicic acid such as sodium silicate, potassium silicate and the like is dissolved, and then the resultant mixture is further mixed with an aqueous solution of electrolytes containing &lsqb;1&rsqb; a cationic substance which has an affinity to the diene-based rubber including a cationic polymer coagulating agent such as poly(meth)acrylic ester or the like and a cationic surfactant such as alkylamine acetate or the like and &lsqb;2&rsqb; a salt of an acid such as hydrochloric acid, nitric acid and the like with a multivalent metal such as calcium, magnesium and the like, to form a co-coagulated material, which is followed by a drying, whereby obtaining a diene-based rubber/inorganic compound complex.

Methods for producing diene-based rubber/inorganic compound complexes and rubber compositions containing the same

A rubber composition comprises a polar group-containing diene polymer synthesized through an emulsion polymerization as a rubber component, and an inorganic filler represented by a formula of mM.xSiO .zH O wherein M is a metal selected from the group consisting of aluminum, magnesium, titanium and calcium, an oxide or a hydroxide of such a metal or an hydrate thereof, m is an integer of 1 to 5, x is an integer of 0 to 10, y is an integer of 2 to 5 and z is an integer of 0 to 10.

Rubber composition

An objective of the invention is to provide a conjugated diene-based rubber having a specific composition and an oil extended rubber using the same, as well as a rubber composition capable of being converted into a vulcanized rubber which has a low rolling resistance, an excellent wearing resistance and the like, and is useful for a tire or the like. A conjugated diene-based rubber in the invention has repeating units consisting of 1 to 30% by mass of an olefinically unsaturated nitrile monomer unit such as acrylonitrile, 10 to 50% by mass of an aromatic vinyl monomer unit such as styrene, 19.9 to 88.9% by mass of a conjugated diene monomer unit such as 1,3-butadiene and 0.1 to 10% by mass of a monomer unit having one polymerizable unsaturated group and at least one functional group selected from the group consisting of an amino group, a hydroxyl group, an epoxy group, a carboxyl group and an alkoxysilyl group, and has a specific glass transition point and a Mooney viscosity &lsqb;ML (100&deg; C.)&rsqb;. An oil extended rubber in the invention comprises 100 parts by mass of a conjugated diene-based rubber and 10 to 60 parts by mass of an extending oil. A rubber composition in the invention comprises a conjugated diene-based rubber or an oil extended rubber and an inorganic filler such as a silica.

Growing community of inventors

Tokyo, Japan

Tomohisa Konno