Tokyo Electron Limited

Other

Tomohiro Suzuki

Chishio Koshimizu

Shigeru Kasai

Hiroyuki Miyashita

Masatake Yoneda

Sumi Tanaka

Nobuo Ishii

Yusuke Muraki

Masahiro Shimizu

Masafumi Ito

Minoru Yazawa

Masamichi Nomura

Kazuhiro Ooya

Miwa Shimizu

Yasuyuki Okamura

Tatsuo Shiina

Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Etching method, etching apparatus, and storage medium

An annealing apparatus includes heating sources provided to face a wafer W, the heating sources having LEDs emitting lights to the wafer; light-transmitting members for transmitting the lights emitted from the LEDs; and cooling members made of aluminum and provided to directly contact with the heating sources, respectively. The heating sources include a plurality of LED arrays having supporters made of AlN, each having one surface on which the LEDs are adhered by using a silver paste; and other surface on which thermal diffusion members made of copper are adhered by using a solder. The LED arrays are fixed to the cooling member by using screws via a silicone grease.

Annealing apparatus

Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

Annealing device

Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamberfor accommodating a wafer W; heating sourcesandincluding LEDsand facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting membersandarranged in alignment with the heating sourcesandto transmit the light emitted from the LEDs; cooling membersandsupporting the light-transmitting membersandat opposite side to the processing chamberto make direct contact with the heating sourcesandand made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling membersandwith a coolant.

A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatusmeasures a temperature of the substrate to be processed. A temperature control unitcarries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unitcontrols the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unitbased on a measured temperature measured by the temperature measuring apparatus

Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media

A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type.

Heating apparatus, heat treatment apparatus, computer program and storage medium

A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.

Method for measuring physical quantity of measurement object in substrate processing apparatus and storage medium storing program for implementing the method

A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

System, apparatus, and method for determining temperature/thickness of an object using light interference measurements

The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

Method and apparatus for measuring temperature of substrate

In the apparatus according to the present invention, light from a light source is split into measurement light and reference light, the optical path length of the reference light is altered and a plurality of measurement light interference waveforms resulting from the interference of measurement beams reflected at a measurement target and the reference light are measured. One of these interference waveforms is designated as a reference interference waveform, another interference waveform corresponding to a measurement beam reciprocally reflected at the two end surfaces of the measurement target twice more than the measurement beam corresponding to the reference interference waveform is designated as a selected interference waveform, the optical path length of the measurement light indicated by the distance between the two end surfaces of the measurement target is measured based upon these interference waveforms. The temperature of the measurement targets is determined in correspondence to the optical path length.

Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method

Light from a light source is split at a first splitter into a temperature measurement beam and a reference beam, the temperature measurement beam is further split at a second splitter into first through nth measurement beams, and the reference beam is reflected at a reference beam reflecting means. The first through nth measurement beams are radiated onto a temperature measurement target by ensuring that the optical path lengths of the first through nth measurement beams extending from the second splitter to the temperature measurement target are different from one another. By driving the reference beam reflecting means, the optical path length of the reference beam reflected at the reference beam reflecting means is altered, and concurrently, a light receiving means senses and measures interference induced by the first through and measurement beams reflected at the temperature measurement target and the reference beam reflected at the reference beam reflecting means.

Temperature measuring apparatus, temperature measurement method, temperature measurement system, control system and control method

The present invention aims to exclude the influence of stray light dye to a heating lamp when measuring the temperature of an object to be treated, such as a wafer, with the use of a radiation thermometer. The present invention utilizes the relationship between a power W supplied from an output control section to lamps and optical energy radiated from the lamps . Influence which the light radiated from the lamps exerts on the output voltage of a photodiode is experimentally found beforehand as a function of the power W, and stored in a computing section . The computing section subtracts the influence of stray light from the lamps , which is included in the output voltage of the photodiode , from the output value of the photodiode on the basis of the value of the power W transmitted from the output control section , and calculates the temperature of a susceptor

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Nirasaki, Japan

Tomohiro Suzuki