Mitsubishi Electric Corporation

Tomohiro Shinagawa

Keisuke Nakamura

Takeo Furuhata

Eiji Yagyu

Kunihiko Nishimura

Shuichi Hiza

Masahiro Fujikawa

Kenichiro Kurahashi

Koji Yoshitsugu

Muneyoshi Suita

Akifumi Imai

Shingo Tomohisa

Yasushi Fujioka

Takashi Matsuda

Removal of substrates in a composite substrate is facilitated, and flaking of the composite substrate in an unintended process is prevented. A method for manufacturing a composite substrate includes: forming a first bonding material in a first surface of a first substrate; forming, in the first surface, at least one groove located more inward than a periphery in a plan view of the first substrate; forming the first bonding material along an inner wall of the at least one groove, the first bonding material not filling into space enclosed by the inner wall of the at least one groove; forming a second bonding material on a second surface of a second substrate; and bonding the first bonding material and the second bonding material together in a region except the at least one groove.

Method for manufacturing composite substrate, and composite substrate

The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

Semiconductor manufacturing method and semiconductor manufacturing device

In a semiconductor device including a crystalline nitride layer, in which diamond is used for heat dissipation thereof, it is an object of the present invention to suppress cracking of the crystalline nitride layer. The semiconductor device includes a layered body and a heat dissipation layer. The layered body includes a crystalline nitride layer and a composite layer. The composite layer includes a non-inhibiting portion which does not inhibit diamond growth on a surface thereof and an inhibiting portion which inhibits the diamond growth on the surface. A layered body main surface of the layered body has a first region in which the non-inhibiting portion is exposed and a second region in which the inhibiting portion is exposed. The heat dissipation layer is made of diamond, opposed to the main surface, adhered to the first region, and separated from the second region with a void interposed therebetween.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor substrate according to the present invention includes a nitride semiconductor layer, an amorphous semiconductor layerformed on one main surface side of the nitride semiconductor layer, a high-roughness layerwhich is a semiconductor layer formed on the amorphous semiconductor layerand has a surface roughness larger than the amorphous semiconductor layer, and a diamond layerformed on the high-roughness layer. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.

Semiconductor substrate

An object is to provide a technology capable of suppressing a crack of a crystalline nitride layer which is generated due to a stress caused by difference in thermal expansion coefficients between a crystalline nitride and diamond. A semiconductor device includes a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is disposed on a first main surface of the crystalline nitride layer. The diamond layer is disposed at least on a lateral portion of the structure and has a void between the diamond layer and the first main surface of the crystalline nitride layer. The void is a stress absorbing space, for example.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Tomohiro Shinagawa