Fujitsu Corporation

Adv Antest Corporation

Tomohiro Sakazaki

Hiroshi Yasuda

Masami Takigawa

Kiichi Sakamoto

Tomohiko Abe

Takamasa Satoh

Kenichi Kawakami

Hidefumi Yabara

Yoshihisa Ooaeh

Hideki Nasuno

Isamu Seto

Tatsuro Ohkawa

Akio Takemoto

Akio Yamada

An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

Electron beam lithography apparatus and electron beam lithography method

Disclosed is a multicolumn charged-particle beam lithography system having the circuitry of a settlement wait time control unit thereof simplified. The settlement wait time control unit controls a settlement wait time to be spent by each of amplifiers connected to main deflectors necessary to realize concurrent exposure among columns. The charged-particle beam lithography system has a plurality of columns for patterning an exposed sample by deflecting and sweeping a charged-particle beam on the exposed sample according to expose pattern data. The charged-particle beam lithography system includes a settlement wait time control unit for controlling a settlement wait time to be spent by each of the amplifiers connected to the deflectors necessary to realize concurrent exposure among the columns. The settlement wait time control unit includes a circuit for comparing magnitudes of changes in deflection data items output from deflector adjusting circuits in the columns with one another and selecting a maximum value. The settlement wait time control unit further includes a circuit for determining a settlement wait time for all the columns according o the magnitude of a change of the selected maximum value.

Multicolumn charged-particle beam lithography system

A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

Charged-particle-beam exposure device and charged-particle-beam exposure method

Charged-particle-beam exposure device and charged-particle-beam exposure

Growing community of inventors

Kasugai, Japan

Tomohiro Sakazaki