Jeol Ltd.

Tomohiro Mihira

Mitsuo Suga

Tomohisa Fukuda

Tatsuhito Kimura

Yoshikazu Sasaki

Misumi Kadoi

Norimasa Sakuta

A holder includes a first sub holder configured to hold a primary specimen, and a second sub holder configured to hold a support member. The primary specimen is processed in a first state where the holder is disposed within a first specimen processing apparatus. Subsequently, in a second state where the holder is disposed within a second specimen processing apparatus, a secondary specimen is prepared from the primary specimen, the secondary specimen is moved onto the support member, and a thin film specimen is prepared from the secondary specimen.

Specimen processing holder and specimen processing method

Provided is a charged particle beam apparatus that acquires an image by scanning a specimen with a charged particle beam, and includes a contrast adjustment circuit that adjusts contrast of the image; a brightness adjustment circuit that adjusts brightness of the image; and a control unit that controls the contrast adjustment circuit and the brightness adjustment circuit. The control unit acquires information on luminance of a reference image in a non-signal state, and information on an average value of luminance of each pixel of the reference image, controls the brightness adjustment circuit, based on the acquired information on luminance of the reference image in a non-signal state, acquires the image in a state where the brightness adjustment circuit is controlled, and adjusts the contrast of the acquired image by controlling the contrast adjustment circuit, based on the average value of luminance of each pixel of the reference image.

Charged particle beam apparatus and image adjustment method

A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source for producing an ion beam, a lens system for focusing the beam onto the sample, a detector for detecting secondary electrons emanating from the sample, and a controller for controlling the lens system. The controller is operative to provide control such that the sample is irradiated with the ion beam without scanning the beam and that a focus of the ion beam is varied by varying the intensity of the objective lens during the ion beam irradiation. Also, the controller measures the intensity of a signal indicating secondary electrons emanating from the sample while the intensity of the objective lens is being varied. Furthermore, the controller makes a focal adjustment of the ion beam on the basis of the intensity of the objective lens obtained when the measured intensity of the signal indicating secondary electrons is minimal.

Focused ion beam system and method of making focal adjustment of ion beam

A charged-particle beam instrument is offered which can inspect side and rear surfaces of a sample. Two electron optical microscope columns are mounted in a vacuum chamber. Each of the microscope columns has an electron gun, a condenser lens system, a deflector, and a secondary electron detector. A sample stage assembly on which a sample is placed is mounted in the vacuum chamber. The stage assembly consists of a rotary stage, an X-stage, and a Y-stage. One of the microscope columns is placed in a position where the electron beam from the column can scan at least an upper part of a side surface of the sample. The other microscope column is placed in a position where the beam from the column can scan at least a lower part of the side surface of the sample.

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Tokyo, Japan

Tomohiro Mihira