Hitachi-kokusai Electric Inc.

Tomoharu Shimada

Keishin Yamazaki

Sadao Nakashima

Iwao Nakamura

Akira Morohashi

Kojiro Yokozawa

Naoto Nakamura

Kenichi Ishiguro

A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus () is provided with a reaction tube () for treating a substrate (), a quartz adaptor () for supporting the reaction tube (), a nozzle () connected to the adaptor () for supplying a treatment gas into the reaction tube (), and a heater () provided outside the reaction tube () for heating inside the reaction tube (). The nozzle () is connected to an upper plane of the adaptor () in the reaction tube () at least a part which is of the nozzle () and is connected with the adaptor () is made of quartz and other nozzle parts are made of silicon carbide.

Heat treatment apparatus and method of manufacturing substrates

A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate supportis formed from a main body portionand a supporting portion. In the main body portion, a plurality of placing portionsextend parallel, and supporting portionsare provided on the placing portions. A substrateis placed on the supporting portion. The supporting portionhas a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portionis made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion

Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.

Apparatus for fabricating a semiconductor device

Growing community of inventors

Komatsu, Japan

Tomoharu Shimada