Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Tomoaki Sawabe

Shintaro Enomoto

Tomio Ono

Keiji Sugi

Daimotsu Kato

Toshiya Yonehara

Yasushi Shinjo

Akio Amano

Tomoko Sugizaki

Shinobu Sugimura

Yukitami Mizuno

Koji Asakawa

Tomomasa Ueda

Keiji Ikeda

Nobuyoshi Saito

Isao Takasu

Norikatsu Sasao

Hayato Kakizoe

Atsushi Wada

Tsutomu Tezuka

Fumitaka Arai

Seiji Morita

Naoko Kihara

Chika Tanaka

Kentaro Miura

Isao Amemiya

Ryosuke Yamamoto

Taeko I Urano

Junji Kataoka

Seekei Lee

Akiko Hirao

Yasushi Shinjiyo

Takashi Kaneko

Shinjiro Aono

According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

Pattern formation material and pattern formation method

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Pattern forming material and pattern forming method

According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.

Pattern formation method, block copolymer, and pattern formation material

A semiconductor device of an embodiment includes a first electrode, a second electrode, an oxide semiconductor channel, an insulation layer, an oxide layer, and a gate electrode. The oxide semiconductor channel includes a portion extending along a first direction and connects the first electrode to the second electrode. The insulation layer surrounds the oxide semiconductor channel. The oxide layer covers the oxide semiconductor channel and the insulation layer, and includes an oxide of a metal element. The gate electrode covers the oxide semiconductor channel, the insulation layer, and the oxide layer, and includes the metal element.

Semiconductor device and production method thereof

According to one embodiment, a semiconductor device includes a semiconductor layer and a first layer. The semiconductor layer includes a first portion including a first element and oxygen. The first element includes at least one selected from the group consisting of In, Ga, Zn, Al, Sn, Ti, Si, Ge, Cu, As, and W. The first layer includes a second element including at least one selected from the group consisting of W, Ti, Ta, Mo, Cu, Al, Ag, Hf, Au, Pt, Pd, Ru, Y, V, Cr, Ni, Nb, In, Ga, Zn, and Sn. The first portion includes a first region and a second region. The second region is provided between the first region and the first layer. The first region includes a bond of the first element and oxygen. The second region includes a bond of the first element and a metallic element.

Semiconductor device

According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

Pattern formation method and pattern formation material

A semiconductor device of an embodiment includes a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and extending in a first direction; a gate electrode surrounding the oxide semiconductor layer; and a first gate insulating layer provided between the gate electrode and the oxide semiconductor layer, the first gate insulating layer surrounding the oxide semiconductor layer, and the first gate insulating layer having a length in the first direction shorter than a length of the oxide semiconductor layer in the first direction.

Semiconductor device and method for manufacturing the same

The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.

Pattern forming material, pattern forming method, and method for manufacturing semiconductor device

According to one embodiment, a pattern formation method includes forming a structure body on a first surface of a patterning member, the structure body having protrusions and a recess. The protrusions are arranged at a first pitch along a first direction. The first direction is aligned with the first surface. The recess is between the protrusions. The method further includes forming a resin film of a block copolymer on the structure body. The block copolymer includes first portions and second portions. The first and second portions are arranged alternately at a second pitch along the first direction. The structure body includes first and second regions. The first portions are on the first regions. The second portions on the second regions. The method further includes removing the second portions and the second regions, introducing a metal to the first regions, and etching the patterning member using the first regions.

Pattern formation method

According to one embodiment, a memory includes: a member extending in a first direction and including an oxide semiconductor layer including first to third portions arranged in order from the bit line to the source line; first, second and third conductive layers arranged along the first direction and facing the first to third portions, respectively, the first conductive layer including first material, and each of the second and third conductive layer including a second material different from the first material; a memory cell in a first position corresponding to the first portion, the memory cell including a charge storage layer in the oxide semiconductor layer; a first transistor in a second position corresponding to the second portion; and a second transistor in a third position corresponding to the third portion.

Semiconductor memory including semiconductor oxide

According to one embodiment, a pattern formation method can include performing a first processing of causing a surface of a first member of a processing body to be hydrophobic. The processing body includes the first member and a second member. The second member is provided at a portion of the first member. The method can include performing a second processing of causing the processing body to contact an atmosphere including a metal compound. The second processing is after the first processing. The method can include performing a third processing of processing the processing body in an atmosphere including at least one selected from the group consisting of water, oxygen, and ozone. The third processing is after the second processing. In addition, the method can include removing, after the third processing, at least a portion of another portion of the first member by using the second member as a mask.

According to one embodiment, a memory includes: a first gate of a first transistor and a second gate electrode of the second transistor facing the a semiconductor layer; an oxide semiconductor layer between the first and second transistors and including first to fifth portions in order; a third gate of a first cell facing the first portion; a fourth gate of a third transistor facing the second portion; a fifth gate of a second cell facing the third portion; a sixth gate of a fourth transistor facing the fourth portion; an interconnect connected to the fifth portion; a source line connected to the first transistor; and a bit line connected to the second transistor. A material of the third gate is different from a material of the fourth gate.

Semiconductor memory

A template defect inspection method using an optical system includes emitting linearly polarized light to a template having a metal film formed on at least part of a concave-convex structure that is formed on a substrate and that has a line-and-space pattern, acquiring information on a polarization-rotated component, which is different from linearly polarized light incident on the template, of light reflected by the template in accordance with the emission thereto, converting the acquired information on the polarization-rotated component into an electrical signal, and processing the electrical signal.

Template defect inspection method

An organic electroluminescent device includes first and second substrates, first and second electrodes, an insulating layer, an organic light emitting layer, and an intermediate layer. The first electrode is provided on the first substrate. The insulating layer is provided on the first electrode. The insulating layer includes first and second openings. The second electrode includes first and second conductive parts. The first conductive part covers the first opening. The second conductive part covers the second opening. The organic light emitting layer includes first and second light emitting parts. The first light emitting part is provided between the first electrode and the first conductive part. The second light emitting part is provided between the first electrode and the second conductive part. The second substrate is provided on a stacked body including above. The intermediate layer is provided between the stacked body and the second substrate.

Organic electroluminescent device, illumination apparatus, and illumination system

An organic electroluminescent device includes first and second electrode and an organic light emitting layer. The first electrode has an upper face. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. The second electrode includes a plurality of conductive parts. The conductive parts extend in a first direction parallel to the upper face and are arranged in a second direction. The second direction is parallel to the upper face and intersects with the first direction. When a length of each of the conductive parts in the second direction is set to W1 (micrometer), and a pitch of each of the conductive parts is set to P1 (micrometer). The W1 and the P1 satisfy a relationship of W1&#x2267;&#x2212;647(1&#x2212;W1/P1)+511 and a relationship of W1&#x2266;&#x2212;882(1&#x2212;W1/P1)+847.

Growing community of inventors

Tokyo, Japan

Tomoaki Sawabe