Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Tomoaki Ishihara

Toshihide Nobusada

Kazunori Kobayashi

Akira Nakamura

A method for forming a thin film of the present invention includes the steps of performing sequentially first idling discharge under application of a first level of discharge power upon gas introduction (period t ), intermediate idling discharge under application of a second level of discharge power lower than the first level (period t ), and second idling discharge at the first level of discharge power (period t ), so that the pressure of sputtering gas and an intermediate product produced during the idling discharge are stabilized. The discharge power is lowered to the second level, the shutter is opened, and an ITO thin film, for example, is formed on a first substrate (t ). Thereafter, the same cycles are repeated to form ITO thin films on substrates.

Method for forming thin film

On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed covering the above items, and a second contact hole 12 and a barrier metal 13 are formed. After a first hole 14 for bonding pad is formed, a third interlayer insulation film 15 is provided, and then a third contact hole 16 and a second hole 17 for bonding pad are formed. A transparent electro-conductive film 18 is formed covering the holes 14, 16 and 17. After that, a portion of the transparent electro-conductive film 18 locating above the holes 14, 17 for bonding pad is removed to have the metal interconnection layer 10 exposed. The exposed metal interconnection layer 10 is used as bonding pad 20. This contributes to reliable bonding of bonding wires onto the bonding pad.

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Toyama, Japan

Tomoaki Ishihara