Mitsubishi Electric Corporation

Nagoya University

Tomoaki Furusho

Takeharu Kuroiwa

Kenichi Ohtsuka

Nobuyuki Tomita

Yuji Abe

Masayuki Imaizumi

Takanori Tanaka

Masayoshi Tarutani

Kenichi Hamano

Yoichiro Mitani

Toru Ujihara

Hiroaki Sumitani

Takao Sawada

Shunta Harada

Kenta Murayama

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1&#xd7;10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1&#xd7;10cm.

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.

Silicon carbide epitaxial wafer and semiconductor device

A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from &#x3c;0001&#x3e; face, in a reducing gas atmosphere at a first temperature Tfor a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature Tbelow the annealing temperature Tin the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Method of manufacturing silicon carbide epitaxial wafer

Growing community of inventors

Tokyo, Japan

Tomoaki Furusho