Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitchi, Ltd.

Tomihiro Hashizume

Yasuo Wada

Satoshi Watanabe

Yuji Suwa

Hiroyasu Shichi

Takashi Ohshima

Toshiaki Kusunoki

Shinichi Matsubara

Noriaki Arai

Keigo Kasuya

Masaaki Fujimori

Seiji Heike

Yoshimasa A Ono

Masahiko Ichimura

Toshiyuki Onogi

Yoshimi Kawanami

Masahiko Ando

Masayoshi Ishibashi

Yoichi Ose

Takeo Shiba

Yusuke Sakai

Hideaki Koizumi

Satoshi Tomimatsu

Tohru Ishitani

Masatoshi Yasutake

Hiroshi Kajiyama

Tadashi Arai

Yoshimasa Murayama

Sanato Nagata

Akira Nambu

Takeshi Nakayama

Akira Sugawara

Norihide Saho

Tsuyoshi Yamamoto

Tsunenori Nomaguchi

Ken Yamaguchi

Hiroyuki Muto

Takafumi Miwa

Hiroyasu Kaga

Munehisa Mitsuya

Soichiro Matsunaga

Hironori Moritani

Tsuneo Ichiguchi

Minoru Kaneda

Hiromitsu Seino

Mark Lutwyche

Atsushi Kobaru

In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion () configured to emit an electron when an electric field is generated; a shank () that supports the protrusion () and has a diameter decreasing toward the protrusion (); and a body () that supports the shank (), in which the protrusion (), the shank (), and the body () are each made of a hexaboride single crystal, and a part including the shank () and the body () excluding the protrusion () is covered with a material having a work function higher than that of the hexaboride single crystal.

Electron source, electron beam device, and method for manufacturing electron source

The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.

Electron source, method of manufacturing the same, and electron beam apparatus using the same

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

Electron source, method for manufacturing the same, and electron beam device using the same

To enable evaluation of a shape of a fine particle and a fine particle type, a substrate is set as a substrate on which an isolated fine particle to be measured and an isolated standard fine particle in the vicinity of the isolated fine particle to be measured are disposed, and a scanning electron microscope body including a detector configured to detect secondary charged particles obtained by scanning a surface of the substrate with an electron beam probe, and a computer that processes a detection signal and generates an image of the isolated fine particle to be measured and the isolated standard fine particle are provided. The computer corrects a shape of the isolated fine particle to be measured by using a measurement result of the isolated standard fine particle disposed in the vicinity of the isolated fine particle to be measured. Further, by attaching a fine particle spreading tank equipped with a fine particle suspension dropping device inside the microscope body, automatic measurement including dropping of fine particle suspension onto a surface of a surface-modified substrate is possible.

Particle measuring device and particle measuring method

An Hion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The Hion can be obtained by use of a probe current within a voltage rangearound a second peakoccurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

Field ionization source, ion beam apparatus, and beam irradiation method

An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

Ion beam device and cleaning method for gas field ion source

An electron source that can be used stably for a long time even when hexaboride is used, and an electron beam device using the electron source are provided. The invention is directed to an electron source which includes a filament made of a metal, a metal tube that is fixed to the filament and has a plurality of recesses disposed at least in two axial directions so as to surround a central axis at an outer periphery, and a columnar hexaboride tip that emits an electron, is disposed so as to protrude from the inside of the metal tube to a side opposite to the filament, and is in contact with a bottom of each of the plurality of recesses of the metal tube.

Electron source and electron beam device using the same

To provide a sample for measuring particles enabling the three-dimensional particulate shape to be measured and the particulate species to be evaluated, the sample for measuring particles includes a substrate; isolated nanoparticles to be measured which are disposed on the substrate; and isolated standard nanoparticles which are disposed on the substrate in the vicinity of the isolated nanoparticles to be measured.

Sample for measuring particles, method for measuring particles and apparatus for measuring particles

In order to provide a stable hexaboride single-crystal field emission electron source capable of heat-flashing, this field emission electron source is provided with a metal filament, a metal tube joined thereto, a hexaboride tip that emits electrons, and graphite sheets that are independent of the metal tube and the hexaboride tip. The hexaboride tip is arranged so as not to be in structural contact with the metal tube due to the graphite sheets. The hexaboride tip, the graphite sheets, and the metal tube are configured so as to be mechanically and electrically in contact with one another.

Field emission electron source, method for manufacturing same, and electron beam device

An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeBfor the CFE electron source is provided. In an electron beam apparatus having a CFE electron source, the emitter of the electron beam of the CFE electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, the hexaboride emits the electron beam from the {310} plane, and the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.

Electron beam apparatus

A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Ion beam apparatus and ion beam irradiation method

This sample holder for a scanning probe microscope is constituted of (1) a container that retains a liquid and (2) a flat-plate-shaped upper cover that covers an upper opening of the container and that has a narrow slit above the position where a sample is placed. In the upper cover, the slit has a slit width with which a thin film of the liquid is formed over the upper surface of the sample when the liquid fills the space between the container and the upper cover. The thin film of the liquid has a film thickness smaller than the distance between the upper surface of the sample and the upper cover.

Scanning probe microscope and its sample holder

Sample transferring can be securely and easily performed between an FIB device, an electron microscope, and an atom probe device, and atom probe analysis can be performed to a material that easily alters due to atmospheric exposure. A sample holder that holds a sample () is provided with an atmosphere-isolation mechanism that prevents the sample from altering due to the atmospheric exposure upon the sample transferring between the devices. There is provided a structure enabling of attaching and detaching a housing () of a sample holder leading end of a part of the atmosphere-isolation mechanism in an analytical vacuum device, such as the atom probe device.

Sample holder and analytical vacuum device

Provided is a scanning probe microscope that takes measurements at high spatial resolution on physical information such as array structure of water molecules at a specimen-culture fluid interface in a culture fluid as well as irregularities of the surface of a specimen and composition distribution and array structure of molecules, proteins, etc. even in the atmosphere, an ambient air, vacuum, among others. The scanning probe microscope includes: a probing needle (); a specimen holder () in which a specimen () is mounted; an oscillator () that produces a periodic oscillation to change the probing needle position; a pulse oscillation type laser light source () that emits light toward a spot, which is put under measurement by the probing needle, on the specimen; a detector () that measures intensity of output light which is output from the specimen by energy spectroscopy; and a control device (). The control device decreases amplitude of the periodic oscillation to change the probing needle position by the oscillator, shortens a relative distance between the probing needle and the specimen, and synchronizes shortening of the distance between the probing needle and the specimen and emission of pulse oscillation laser light, thus optimizing efficiency of tip-enhanced detection.

Scanning probe microscope and measuring method using same

To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same

Growing community of inventors

Hatoyama, Japan

Tomihiro Hashizume