Taiwan Semiconductor Manufacturing Comp. Ltd.

Tom Tseng

Jih-Churng Twu

Hung-Ta Huang

Stanley Huang

Hsueh-Li Sun

Juinn-Jie Chang

A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0&#xd7;10atoms/cm; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.

Growing community of inventors

Hsin-Chu, Taiwan

Tom Tseng