Other

Irresistible Materials, Ltd

Tom Lada

Edward A Jackson

Andreas Frommhold

John L Roth

Alex Phillip Graham Robinson

Alexandra McClelland

Alan G Brown

Alex P G Robinson

Greg O'Callahan

Carmen Popescu

Andeas Frommhold

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

Enhanced EUV photoresist materials, formulations and processes

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

Spin on hard mask material

Growing community of inventors

Somerville, MA, United States of America

Tom Lada