Texas Instruments Corporation

Tom Grebs

Osvaldo Jorge Lopez

Jonathan Almeria Noquil

Simon John Molloy

A packaged transistor device () comprises a semiconductor chip () including a transistor with terminals distributed on the first and the opposite second chip side; and a slab () of low-grade silicon (l-g-Si) configured as a ridge () framing a depression including a recessed central area suitable to accommodate the chip, the ridge having a first surface in a first plane and the recessed central area having a second surface in a second plane spaced from the first plane by a depth () at least equal to the chip thickness, the ridge covered by device terminals () connected to attachment pads in the central area having the terminals of the first chip side attached so that the terminals () of the opposite second chip side are co-planar with the device terminals on the slab ridge.

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Bethlehem, PA, United States of America

Tom Grebs