Sony Corporation

Other

Tohru Ogawa

Tetsuo Gocho

Takashi Noguchi

Yuji Ikeda

Hideo Hosono

Shigeo Kubota

Michio Oka

Minoru Takeda

Yoshiaki Ikuta

Shinya Kikugawa

Hiroyuki Nakano

Noriaki Shimodaira

Akio Masui

Shuhei Yoshizawa

Masaya Uematsu

Atsushi Someya

A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.

Pattern formation method and method and apparatus for production of a semiconductor device using said method

An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm .

Exposure apparatus, semiconductor device, and photomask

A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

Method of forming polycrystalline silicon layer on substrate and surface

A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.

A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

Semiconductor device containing Si, O and N anti-reflective layer

A process for production of a micropattern, comprised of a step for forming an antireflection film comprised of an inorganic film on an underlying substrate, a step for forming a resist film on said antireflection film, a step for exposing said resist film using i-rays or light of a wavelength shorter than i-ray and transferring a mask pattern to the resist film, a step for using the resist film on which the mask pattern had been transferred as a mask to etch the antireflection film and transfer the mask pattern to the antireflection film; and a step for using the antireflection film on which said mask pattern had been transferred as a mask to etch the underlying substrate and transfer the mask pattern to the underlying substrate.

Process for production of micropattern utilizing antireflection film

A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.

Process for the formation of a metal pattern

Method of forming a photoresist pattern using an anti-reflective

Anti-reflective layer used to form a semiconductor device

A pattern projecting method is disclosed. The pattern projecting method has the step of illuminating a mask having a fine pattern formed therein with an exposure light and causing a transmitted light of the mask to be incident on a pupil of a projection optical system to project an image of the fine pattern onto a substrate, the illuminating step using an effective light source capable of achieving such light intensity distribution as to provide a predetermined light intensity in a central region of the pupil, a maximum light intensity in plural peripheral regions around the central region, and a light intensity lower than the maximum light intensity in a region connecting the plural regions.

Pattern projecting method

A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

Method of forming a resist pattern by using a silicon carbide

Method of forming polycrystalline silicon layer on substrate by large

Method of forming a resist pattern by using an anti-reflective layer

Method of forming a resist pattern using an anti-reflective layer

An exposure device in which a reticle having a circuit pattern of a semiconductor device formed on it is irradiated with light beam emanated from a light source, such as a laser light source, for exposing the circuit pattern formed on the reticle on a semiconductor wafer. The exposure device includes a light beam generator for illuminating the reticle having a semiconductor circuit pattern formed on it, an image-forming optical system for forming an image on a wafer of a light image produced on radiating a light beam on the reticle from the light beam generator. The exposure device also includes a movement unit for moving the wafer relative to the image-forming optical system, and an alignment unit for detecting the position on the wafer of the image formed on the wafer by the image-forming optical system for position matching the image by the image-forming optical system relative to the wafer. The light beam generator includes a light source for excitation, a first resonator and a second resonator. The first resonator is illuminated by the light beam from the light source for excitation and outputs the light beam from the light source for excitation after waveform conversion. The second resonator is illuminated by the light beam from the first resonator and outputs the light beam from the first resonator after waveform conversion.

Growing community of inventors

Kanagawa, Japan

Tohru Ogawa