Kabushiki Kaisha Toshiba

Tohru Komatsu

Noriaki Yagi

Michio Sato

Toshihiro Maki

Takashi Yamanobe

Yoshiharu Fukasawa

Hiromi Shizu

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi (where M: refractory metal) grains and Si grains, wherein the number of MSi grains independently existing in a cross section of 0.01 mm of the mixed structure is not greater than 15, the MSi grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi,(where M: refractory metal) grains and Si grains, wherein the number of MSi,grains independently existing in a cross section of 0.01 mm,of the mixed structure is not greater than 15, the MSi,grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi,grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Growing community of inventors

Yokosuka, Japan

Tohru Komatsu