Hitachi-high-technologies Corporation

Tohru Ando

Tsutomu Saito

Yasuhiko Nara

Yayoi Konishi

Kunji Shigeto

Tomoharu Obuki

Shinichi Kato

Mitsugu Sato

Yasuhiro Mitsui

Masaki Takano

Hiroshi Toyama

Masahiro Sasajima

Naoko Ushio

Takeshi Sunaoshi

Masaaki Komori

Munetoshi Fukui

Katsuo Ooki

Mikio Takagi

Koichi Takauchi

Hiroyuki Noda

Ruriko Tsuneta

Shotaro Tamayama

Isamu Sekihara

Yoshihiro Takahoko

Junzo Azuma

Noriko Iizumi

Ryuichiro Tamochi

Kohtaro Hosoya

Mitsugu Yamashita

Yusuke Narita

Takahiro Inada

Kazuyuki Takeda

Michihiro Takayama

Shoutarou Tamayama

The present invention relates to enabling a versatile charged particle beam device, which is used for a wide range of kinds of samples to be observed and has parameters of emission conditions of a primary charged particle beam that is difficult to be registered in advance, to be operated easily and accurately even by a less-experienced operator and to obtain high-resolution images. A charged particle beam device according to the present invention includes, for example: a charged particle source, a focusing lens for a primary charged particle beam emitted from the charged particle source, an objective lens for focusing the primary charged particle beam, a movable objective aperture having multiple objective apertures disposed on a side of the charged particle source with respect to the objective lens, a detector of a secondary signal from the sample resulting from emission of the primary charged particle beam, a display unit configured to process and display a detected secondary signal, and a storage unit configured to store multiple emission conditions of the primary particle beam. The operation controller makes one emission condition be selected, determines whether or not the objective aperture is suitable for the selected emission condition, displays that the objective aperture is unsuitable when the objective aperture is unsuitable, and preadjusts the primary charged particle beam according to the selected emission condition and stores the preadjustment result as parameters for the emission conditions when the objective aperture is suitable.

Method for adjusting charged particle beam device and adjusting beam aperture based on a selected emission condition and charged particle beam device for same

An image display device displays operation items of an electron microscope on an operation screen, and a storage device stores information of assist buttons which display image state information acquired via a detector of the electron microscope. The information of the assist buttons corresponds to image quality of an acquired image via the detector as well as to observation conditions composed of a combination of parameter setting values of the electron microscope, an operation program which analyzes the image quality of the acquired image. The information of the assist buttons is acquired based on analytical results of the image quality as well as current observation conditions, and the assist buttons are displayed on a predetermined part of the operation screen. Accordingly, the skills of a novice user operating a charged particle beam apparatus can be improved.

Charged particle beam apparatus, specimen observation system and operation program

A charged particle beam device allowing an analysis position in a sample analyzable with an EBSD detector to be acquired beforehand, and allowing a sample to be adjusted to a desired analysis position in a short time. A charged particle beam device is provided with a charged particle source (), a charged particle optical system (), an EBSD detector (), a sample stage (), an image display unit () for displaying a portion of the sample observable with the EBSD detector and a non-observable portion of the sample such that said portions are distinguished from each other, an operation input unit () where a position to be observed by the EBSD detector is entered, and a control unit () for controlling a planar movement, an inclination movement and a rotation movement of the sample stage so as to allow the observation position entered from the operation input unit to be observed with the EBSD detector.

Charged particle beam device enabling facilitated EBSD detector analysis of desired position and control method thereof

Display screen with graphical user interface

The movement distance of a second adjustment slideris made shorter than that of a first adjustment sliderif the first adjustment slideris positioned in a displayed range, except at both ends thereof, of a set value adjustment axisin a first set value adjustment axis display part. The first adjustment slideris kept unmoved while the second adjustment slideralone is moved in the direction of one of both ends of the displayed range if the first adjustment slideris positioned at least at the one of both ends of the displayed range of the set value adjustment axisin the first set value adjustment axis display part, if the second adjustment slideris also positioned in the displayed range except at the both ends thereof, and if the first adjustment slideris to be selectively operated by a cursor. This structure allows coarse and fine adjustments of set values for operation control to be carried out easily and accurately.

Charged particle beam apparatus and program

In many cases, the charged particle beam apparatus is used basically for observation at a magnification of 10,000 times or higher. It is thus difficult to recognize how the orientation of a sample seen with the naked eye corresponds to the origination of the sample appearing on an acquired image. This makes it difficult intuitively to grasp the tilt direction and other details of the sample. An object of this invention is to provide a charged particle beam apparatus allowing the orientation and the tilted state of the sample to be grasped intuitively. The apparatus includes: a charged particle beam source that emits a charged particle beam; a charged particle beam optical system that irradiates the sample with the charged particle beam; a platform on which the sample is placed; a stage capable of moving the platform at least in a tilt direction; a display unit that displays a tilted state of the platform by use of a simulated image of the platform; an operation input unit that allows a user to designate the position and direction of the sample for observation; and a control unit that controls the amount of movement of the stage based on a signal input from the operation input unit.

Charged particle beam apparatus

The high magnification, high resolution and real-time property of an SEM image are realized when the electrical characteristics of an inspection object are measured, without affecting the electrical characteristics of the inspection object. A high-quality, high-magnification first image including an image of a target position in the inspection object on a sample is acquired. Next, a low-quality, low-magnification second image including the image of the target position in the inspection object on the sample and probe images is acquired. Next, data on the first image is built into the second image to generate an image for coarse-access observation which is the same in magnification as the second image. The generation of the image for coarse-access observation is repeated until a probe comes close to the target position in the inspection object.

Inspection method and device

A specified position in an array structure in which a reference pattern is displayed repetitively through reference pattern counting is identified. In an array structure image, the pattern detection estimating area generated from a starting point, the address of the starting point, and a unit vector are compared with a pattern detected position found in pattern matching with the reference pattern image, to execute pattern counting while determining correct detection, oversights, wrong detection, etc. Array structure images are photographed sequentially while moving the visual field with the use of an image shifting deflector to continue the pattern counting started at the starting point to identify the ending point specified with an address. If the ending point is not reached only with use of the image shifting deflector, the visual field moving range of the image shifting deflector is moved with use of a specimen stage.

Specified position identifying method and specified position measuring apparatus

Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.

Semiconductor inspection method and device that consider the effects of electron beams

A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.

Logical CAD navigation for device characteristics evaluation system

An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Specimen inspection equipment and how to make the electron beam absorbed current images

A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.

Semiconductor testing method and semiconductor tester

A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

Sample inspection apparatus

Growing community of inventors

Tokyo, Japan

Tohru Ando