Applied Materials, Inc.

Todd Schroeder

Timothy Weidman

David P Thompson

Jeffrey W Anthis

Timothy W Weldman

Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Activated silicon precursors for low temperature deposition

Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.

Carbosilane precursors for low temperature film deposition

Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600&#xb0; C., for example between about 23&#xb0; C. and about 200&#xb0; C. or at about 100&#xb0; C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N&#x2014;H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

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Toledo, OH, United States of America

Todd Schroeder