Carl Zeiss Smt Gmbh

Tobias Hackl

Dirk Heinrich Ehm

Ulrich Loering

Markus Weiss

Christoph Zaczek

Vladimir Kamenov

Franz-Josef Stickel

Oliver Dier

Wolfgang Seitz

Siegfried Rennon

Juergen Mueller

Tilmann Assmus

Tilmann AßMUS

Ulrich LÖRING

Jürgen MÜLLER

A mirror () for EUV lithography includes a substrate () and a reflective coating (). The reflective coating has a first group () of layers () and a second group () of layers (), wherein the first group and second group of layers () reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating () is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer () having a layer thickness variation for correcting the surface form of the mirror.

Surface correction of mirrors with decoupling coating

To prevent reflective optical elements () for EUV lithography from becoming electrically charged as they are irradiated with EUV radiation (), an optical system for EUV lithography is proposed, having a reflective optical element (), including a substrate () with a highly reflective coating () emitting secondary electrons when irradiated with EUV radiation (), and a source () of electrically charged particles, which is arranged in such a manner that electrically charged particles are applied to the reflective optical element (), wherein the source () for the charge carrier compensation is exclusively a flood gun applying electrons to the reflective optical element ().

Optical system for EUV lithography with a charged-particle source

Growing community of inventors

Langenau, Germany

Tobias Hackl