Infineon Technologies Ag

Infineon Technologies Bipolar Gmbh & Co. Kg

Tobias Gamon

Michael Larisch

Oskar Neuhoff

Norbert Martin Haueis

Dirk Pikorz

Franz Reithner

Reiner Barthelmess

Uwe Kellner-Werdehausen

Johann Breu

Sebastian Paul Sommer

Harald Kuhn

Norbert Haueis

A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis. The etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges on the edge face only with a part of the jet cross section. A corresponding device for producing an edge structure of a semiconductor component is also described.

Method and device for producing an edge structure of a semiconductor component

A system produces devices that include a semiconductor part and a non-semiconductor part. A front end is configured to receive a semiconductor part and to process the semiconductor part. A back end is configured to receive the processed semiconductor part and to assemble the processed semiconductor part and a non-semiconductor part into a device. A transfer device is configured to automatically handle the semiconductor part in the front end and to automatically transfer the processed semiconductor part to the back end.

System and method for producing devices including a semiconductor part and a non-semiconductor part

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Warstein, Germany

Tobias Gamon