National Center for Advanced Packaging Co., Ltd

National Center for Advanced Package

Tingyu Lin

Wenqi Zhang

Wen Yin

Chuanguo Dou

Liqiang Cao

Heng Yang

Fengze Hou

The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer. The resistance measured by applying an external voltage between the first electrode and the second electrode can be used to indicator a stress of the TSV structure, in particular an axial stress thereof, so that the stress sensor can be used to measure a stress of the TSV structure.

Stress sensor structure and a manufacturing method thereof

A solution for dissipating heat generated from high power chip packages, e.g., a fcBGA package, wbBGA package, 2.5D/3D TSV package, PoP, etc. The heat dissipation system may include a high power chip package including a high power chip. A micro-jet may be attached to the high power chip. A micro-pump may be in fluidic communication with the micro-jet. A heat exchanger may be in fluidic communication with the micro-pump. The high power chip package is assembled on the same PCB with the micro-pump and the heat exchanger.

Heat dissipation solution for advanced chip packages

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Wuxi, China

Tingyu Lin