Agere Systems Inc.

Tingkwan Cheung

Erik Cho Houge

Kim Elshot

Terri Lynn Shofner

Jennifer Lynne Drown

Jennifer Lynn Drown

The present invention provides and apparatus and method for scanning a crystalline sample comprising a sample holder, an electron source for generating an electron beam and a scanning actuator for controlling the relative movement between the electron beam and the crystalline sample. In addition, an image processor is provided for processing images from electrons from the crystalline sample and a controller for controlling the scanning actuator to space points on the crystalline sample, at which the electron beam is directed. The points are preferably spaced apart a distance that is at least as large as a known grain size of the crystalline sample. The controller determines a grain orientation with respect to each point within a series of points within a scan area of the crystalline sample. The controller determines an average grain orientation for the crystalline sample for current image and a previously processed image. The controller monitors a variance in the average deviation and terminates the scanning when the variance in the average grain orientation approaches a predetermined value.

Apparatus for scanning a crystalline sample and associated methods

The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.

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Singapore, Singapore

Tingkwan Cheung