International Business Machines Corporation

Nxp Usa, Inc.

Tingdong Zhou

Roger Donell Weekly

Julio Alejandro Maldonado

Michael Anthony Christo

Matteo Cocchini

Zhaoqing Chen

Rohan U Mandrekar

Wiren Dale Becker

Chetan Mehta

Trent Uehling

Victor Anthony Garibay

Doorlabh Panjwani

Michael Stephen Floyd

Lee Evan Eisen

Haoxing Ren

Chee Seng Foong

Jinwoo Choi

Hua Xiang

Thomas Strach

Huajun Wen

James S Golab

David Clegg

Stanley Andrew Cejka

Anand Haridass

Ruchir Puri

Sungjun Chun

Robert Joseph Wenzel

Dulce M Altabella Cabrera

Twila Jo Eichman

A semiconductor device substrate is provided. The substrate includes an embedded trace substrate (ETS) portion. The ETS portion includes a first conductive layer embedded in the ETS portion at a first major surface. A portion of the first conductive layer is patterned to form a signal line. A non-conductive layer is disposed between the first conductive layer and a second conductive layer second embedded in the ETS portion. A third conductive layer is formed over the first major surface of the ETS portion. The third conductive layer is configured to form a stripline with the signal line of the first conductive layer.

Device package substrate structure and method therefor

Structures and methods for directly testing a semiconductor wafer having micro-solder connections. According to one embodiment, a method forms a pattern of micro-solder connections coupled with a through substrate via (TSV) that can be directly tested by electrical probing, without the use of a testing interposer. According to another embodiment, a method tests the pattern of micro-solder connections. According to another embodiment, a novel electrical probe tip structure has contacts on the same pitch as the pattern of micro-solder connections.

3D chip testing through micro-C4 interface

Power may be supplied to an electronic module according to various techniques. In one general implementation, for example, a system for supplying power to an electronic module may include a printed circuit board, the electronic module, and a conductive foil. The board may include a number of contact locations on a first side, with at least one of the contact locations electrically coupled to a via to a second side of the board. The electronic module may be electrically coupled to the contact locations on the first side of the board and receive electrical power through the at least one contact location electrically coupled to a via. The foil may be adapted to convey electrical power for the electronic module and electrically coupled on the second side of circuit board to at least the via electrically coupled to a contact location that receives electrical power for the electronic module.

Electronic module power supply

Embodiments of a substrate are provided herein, which include: a first metal plane and a second metal plane in a first metal layer, the first and second metal planes laterally separated by a first gap of dielectric material; and a third metal plane and a fourth metal plane in a second metal layer vertically adjacent to the first metal layer, the third and fourth metal planes laterally separated by a second gap of dielectric material, wherein the second gap comprises a first laterally-shifted gap portion and a second laterally-shifted gap portion, the first laterally-shifted gap portion is laterally offset from a vertical footprint of the first gap in a first lateral direction, and the second laterally-shifted gap portion is laterally offset from the vertical footprint of the first gap in a second lateral direction opposite the first lateral direction.

Substrate dielectric crack prevention using interleaved metal plane

A stacked monitor structure and method of measuring thicknesses of embedded layers in a build-up substrate is provided. The stacked monitor structure includes a multi-layer substrate having a first shape formed in a first conductive layer of the multi-layer substrate and a second shape formed in a second conductive layer of the multi-layer substrate, a region of the second shape overlapping the first shape. A first dielectric layer is disposed between the first conductive layer and the second conductive layer. A measuring device is configured to measure a thickness of the first conductive layer at a first location on the stacked monitor structure, a thickness of the second conductive layer at a second location on the stacked monitor structure, and a combined thickness of the first conductive layer, the second conductive layer, and the first dielectric layer at a third location on the stacked monitor structure.

Package materials monitor and method therefor

Embodiments of a semiconductor packaged device and method of making thereof are provided, the device including a substrate; a first flip chip die mounted to a first major surface of the substrate; a second flip chip die mounted to the first major surface of the substrate, the second flip chip die laterally adjacent to the first flip chip die on the first major surface; and a wire bond formed between a first bond pad on the first flip chip die and a second bond pad on the second flip chip die.

Multiple interconnections between die

An electronic device including a plurality of interconnects are orthogonally arranged in a grid pattern and evenly spaced by a first distance, the plurality of interconnects include: a first conductor pair with conductors arranged next to each other in a first direction, the first direction is oriented diagonally relative to the orthogonal grid pattern, a second conductor pair with conductors arranged next to each other in a second direction substantially perpendicular to the first direction, each conductor of the second conductor pair is spaced by the first distance from each signal conductor of the first conductor pair, and a third conductor pair with conductors arranged next to each other in a third direction substantially parallel to the first direction, each conductors of the third conductor pair is spaced by the first distance from one of the signal elements of the second conductor pair.

Interconnect array pattern with a 3:1 signal-to-ground ratio

Embodiments of an interconnect structure are provided, the interconnect structure including: a reference plane structure having a first major surface and a second major surface opposite the first major surface, the reference plane structure including a plurality of through holes from the first major surface to the second major surface; a plurality of conductive columns, each conductive column centered within a through hole; and a plurality of isolation structures, each isolation structure fills an annular region within the through hole between each conductive column and surrounding portion of the reference plane structure.

Package to board interconnect structure with built-in reference plane structure

The embodiments of the present invention relate to semiconductor device manufacturing, and more particularly to structures and methods of directly testing semiconductor wafers having micro-solder connections. According to one embodiment of the present invention, a method of forming a pattern of micro-solder connections coupled with a through substrate via (TSV) that can be directly tested by electrical probing, without the use of a testing interposer, is disclosed. According to another embodiment, a method of testing the pattern of micro-solder connections is disclosed. According to another embodiment, a novel electrical probe tip structure, having contacts on the same pitch as the pattern of micro-solder connections is disclosed.

One aspect is a method that includes identifying, by a power via placement tool executing on a processor of a circuit design system, a source and a sink of a voltage domain of a multi-layer circuit board based on a design file defining a layout of the multi-layer circuit board. A number of power vias to support a maximum current demand from the source to the sink is determined. Positions of a plurality of the power vias are determined at locations of the multi-layer circuit board forming paths through the power vias between the source and the sink and having a substantially equal total path length through each total path defined between the source and the sink through at least one of the power vias. The design file is modified to include the power vias at the positions.

Distribution of power vias in a multi-layer circuit board

Growing community of inventors

Austin, TX, United States of America

Tingdong Zhou