Intel Corporation

Ting Zhong

Aleksandar Aleksov

Fay Hua

Valery M Dubin

Rajashree Raji Baskaran

Rajasekaran Swaminathan

Hong Xie

Gregorio R Murtagian

Ming Fang

Alan C McAllister

Amit Abraham

Mark T Bohr

Paul B Fischer

Kimin Jun

Pooya Tadayon

Kevin J Lee

Joe F Walczyk

Jin Yang

Chin-Chang Cheng

Roy Swart

Hok-Kin Choi

Youngseok Oh

Vani Thirumala

Val M Dubin

Jianxing Li

Embodiments of the present disclosure are directed towards techniques and configurations to provide solder contacts for electrical connection in socket assemblies. In one embodiment, a solder contact may be disposed on the bottom surface of a die package such that the solder contact is conductively coupled to electrical contacts of the die package. The solder contacts may be disposed to be coupled to pins of a socket assembly, to provide conductive coupling of the electrical contacts of the die package and the pins of the socket assembly. The solder may be selected to be sufficiently soft to provide for better electrical conduction. The pins may also be configured to penetrate the solder contact to provide for better electrical conduction. Other embodiments may be described and/or claimed.

Solder contacts for socket assemblies

A solder and methods of forming an electrical interconnection are shown. Examples of solders include gallium based solders. A solder including gallium is shown that includes particles of other solders mixed with a gallium based matrix. Methods of applying a solder are shown that include swiping a solder material over a surface that includes a resist pattern. Methods of applying a solder are also shown that include applying a solder that is immersed in an acid solution that provides a fluxing function to aid in solder adhesion.

Interconnect alloy material and methods

Embodiments of the invention provide methods for forming electrical connections using liquid metals. Electrical connections that employ liquid metals are useful for testing and validation of semiconductor devices. Electrical connections are formed between the probes of a testing interface and the electronic interface of a device under test through a liquid metal region. In embodiments of the invention, liquid metal interconnects are comprised of gallium or liquid metal alloys of gallium. The use of liquid metal contacts does not require a predetermined amount of force be applied in order to reliably make an electrical connection.

Liquid metal interconnects

Embodiments of the present disclosure are directed to interconnects that include liquid metal, and associated techniques and configurations. The individual interconnects may electrically couple a contact of a printed circuit board (PCB) to a contact of a device under test (DUT). The interconnect may be disposed in or on the PCB. In various embodiments, the interconnect may include a carrier that defines a well (e.g., an opening in the carrier), and the liquid metal may be disposed in the well. In some embodiments, the contact of the DUT, or a contact of an intermediary device, may extend into the well and directly contact the liquid metal. In other embodiments, a flex circuit may be disposed over the well to seal the well. The flex circuit may include a conductive pad to electrically couple the liquid metal to the contact of the DUT. Other embodiments may be described and claimed.

Interconnects including liquid metal

The present disclosure relates to the field of fabricating microelectronic packages, wherein components of the microelectronic packages may have magnetic attachment structures comprising a magnetic component and a metal component. The magnetic attachment structure may be exposed to a magnetic field, which, through the vibration of the magnetic component, can heat the magnetic attachment structure, and which when placed in contact with a solder material can reflow the solder material and attach microelectronic components of the microelectronic package.

Magnetic attachment structure

Embodiments of the invention include apparatuses and methods relating to copper die bumps with electtomigration cap and plated solder. In one embodiment, an apparatus comprises an integrated circuit die, a plurality of copper bumps on a surface of the die, electromigration(EM) caps substantially covering a mating surface of the copper bumps capable of controlling intermetallic formation between the cooper bumps and solder, and solder plating on the EM caps capable of protecting the EM caps from oxidation prior to packaging.

Copper die bumps with electromigration cap and plated solder

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.

Forming a barrier layer in interconnect joints and structures formed thereby

A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

Capping copper bumps

Metal alloy barrier layers formed of a group VIII metal alloyed with boron (B) and/or phosphorous (P) and an at least one element from glyoxylic acid, such as carbon (C), hydrogen (H), or carbon and hydrogen (CH) formed by electoless plating are described. These barrier layers may be used as a barrier layer over copper bumps that are soldered to a tin-based solder in a die package. Such barrier layers may also be used as barrier layer liners within trenches in which copper interconnects or vias are formed and as capping layers over copper interconnects or vias to prevent the electromigration of copper.

Methods to deposit metal alloy barrier layers

A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.

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Tigard, OR, United States of America

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