Taiwan Semiconductor Manufacturing Comp. Ltd.

Ting Fang

Fu-Kai Yang

Mei-Yun Wang

Chen-Ming Lee

Chung-Hao Cai

Chia-Hsien Yao

Ping-Wei Wang

Shih-Hao Lin

I-Wen Wu

Jui-Lin Chen

Chao-Yuan Chang

Jui-Ping Lin

Yen-Jun Huang

Da-Wen Lin

Chien-Yuan Chen

Cheng-Ming Lee

Chun-Po Chang

Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first fin structure and a second fin structure over a substrate, a first source/drain feature disposed over the first fin structure and a second source/drain feature disposed over the second fin structure, a dielectric feature disposed over the first source/drain feature, and a contact structure formed over the first source/drain feature and the second source/drain feature. The contact structure is electrically coupled to the second source/drain feature and is separated from the first source/drain feature by the dielectric feature.

Overhanging source/drain contact

A method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. The method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.

Source/drain contact structure

A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Source/drain contact having a protruding segment

A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an isolation structure formed over a substrate, and a gate structure formed over the isolation structure. The FinFET device structure includes a first dielectric layer formed over the isolation structure and adjacent to the gate structure and a source/drain (S/D) contact structure formed in the first dielectric layer. The FinFET device structure also includes a deep contact structure formed through the first dielectric layer and adjacent to the S/D contact structure. The deep contact structure is through the isolation structure, and a bottom surface of the S/D contact structure is higher than a bottom surface of the deep contact structure.

Fin field effect transistor (FinFET) device structure with deep contact structure

A method of forming a semiconductor device structure is provided. The method includes forming an insulating layer over a semiconductor substrate including a conductive feature, forming an insulating layer with a trench over the semiconductor substrate to expose the conductive feature, and forming a sacrificial liner layer over two opposite sidewalls and a bottom of the trench. Ions are implanted into the conductive feature covered by the sacrificial liner layer, so that a doping region is formed in the conductive feature and has two opposite side edges respectively separated from the two opposite sidewalls of the trench. The sacrificial liner layer is removed after forming the doping region, and a conductive connecting structure is formed in the trench. The two opposite sidewalls of the conductive connecting structure are respectively separated from the two corresponding opposite sidewalls of the trench by an air spacer.

Contact structure with air spacer for semiconductor device and method for forming the same

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Hsinchu, Taiwan

Ting Fang