Aixtron, Inc.

Timothy McEntee

Peter Baumann

Johannes Lindner

Marcus Schumacher

The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material () or a starting material () dissolved in a liquid into a tempered evaporation chamber () with the aid of one respective injector unit () while said vapor is fed to the processing chamber by means of a carrier gas (). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material () through the associated injector unit (), are individually adjusted or varied.

Growing community of inventors

Deutschland, Germany

Timothy McEntee