Texas Instruments Corporation

Timothy J Hogan

Lawrence D Dyer

Mike Brenner

Timothy A Taylor

Lisa A Lester

Sean Christopher O'Brien

Edgardo R Hortaleza

Lucius Marshall Sherwin

Ronald Charles Roth

Robert J Falcone

Joseph G Harden

System and method for maximizing image quality by eliminating vias on a reflective surface. A preferred embodiment comprises depositing a first portion of a mirror surface over a support surface, applying a protective coating on the mirror surface, and then inverting the via. The preferred embodiment also comprises removing a portion of the inverted via and then depositing a second portion of the mirror surface. The remaining portion of the inverted via fills the via and provides a level surface for the depositing of the second portion of the mirror surface, reducing the amount of light scattered by the via.

System and method for increasing image quality in a display system

A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to &#x3c;100&#xb0; C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distancefrom the edge-to-center of the upper and lower grid plates,andof a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Method for improving ash rate uniformity in photoresist ashing process equipment

A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100&deg; C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance from the edge-to-center of the upper and lower grid plates, and of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention uses a superhard protective layer such as DLC or TiW deposited over the partially fabricated device prior to a partial-saw. This superhard protective layer reduces the generation of defects in the underlying photoresist layers, and allows a wet chemical HF acid to etch away particles and damage of the underlying oxide edges. A 6% BHF solution can be utilized. The present invention substantially improves the yield of micromechanical devices.

Method of reducing wafer particles after partial saw using a superhard

An apparatus (304) and method is provided for bonding wire (104) to bond sites (108) of integrated circuits (110), lead frames, and packages at room temperatures. In preferred embodiments a ball end (106) of a gold wire (104) is bonded to an aluminum bond pad (108). Apparatus (304) includes a high frequency ultrasonic energy source (306) designed to provide ultrasonic energy at frequencies above 200 kHz. The ultrasonic energy is transmitted to the bonding interface via capillary (302). In this manner, a strong bond is formed between ball end (106) and bonding site (108). The apparatus and method provided enable bonds of sufficient shear strength to be fabricated in a sufficiently short bonding time even at ambient temperatures, enabling the efficient fabrication of temperature sensitive devices such as micromechanical structures.

Room temperature ball bonding

A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention comprises choosing compatible photoresist layers to avoid generating defects in the layers of photoresist which could allow a wet chemical HF acid etch process to damage an underlying micromechanical device. The present invention allows a very strong solution of hydrofluoric acid to be utilized to remove particles and debris after a partial-saw process, and to remove a damaged portion of an underlying CMOS layer (22) at a region (68) proximate a kerf (62). Using an HF solution having a concentration of about 6% is desired. The present invention substantially improves the yield of micromechanical devices.

Method of reducing wafer particles after partial saw

A method for bonding a metal wire (17) to a metal bond site (16) utilizes an ultrasonic power source (12) that is at approximately 162 KHz. A mash force is applied from a pressure source (13) during bonding. A metal exchange takes place between the metal wire (17) and the bond site (16) during the application of the ultrasonic power to produce a strong bond between the metal wire (17) and the bond site (16).

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Allen, TX, United States of America

Timothy J Hogan