Micron Technology Incorporated

Timothy J Allen

Larry Duane Kinsman

Jerry Michael Brooks

Howard E Rhodes

Stephen L Casper

Brian M Shirley

Aaron M Schoenfeld

D Mark Durcan

J Mike Brooks

Manny K F Ma

Alan G Wood

Ward D Parkinson

Mark D Durcan

Douglas M Kelly

A LOC die assembly is disclosed including a die dielectrically adhered to the underside of a lead frame. The lead frame has stress relief slots formed in the undersides of the lead elements proximate the adhesive to accommodate filler particles lodged between the leads and the active surface of the die during transfer molding of a plastic encapsulant. The increased space created by the slots and flexure in the leads about the slots reduces point stresses on the active surface of the die by the filler particles. The increased flexure in the leads about the slots further enhances the locking of the leads in position with respect to the die.

Assembly method for semiconductor die and lead frame

A hybrid lead frame having leads for conventional lead-to-I/O wire bonding, and leads for power and ground bussing that extend over a surface of the semiconductor die are provided where the leads for bussing are held in place by lead-lock tape to prevent bending and/or other movement of the bussing leads during manufacturing. More specifically, the lead-lock tape is transversely attached across a plurality of bussing leads proximate to and outside of the position where the die is to be attached.

Structure and method for securing bussing leads

A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals. The first and second conductive members may each have an intermediate portion between the first and second end portions thereof that is narrower than the second end portions thereof, and the conductive members may be staggered by axially offsetting the second end portion of the second conductive member from the second end portion of the first conductive member.

Method and apparatus for coupling a semiconductor die to die terminals

An LOC die assembly is disclosed including a die dielectrically adhered to the underside of a lead frame. The lead frame has stress relief slots formed in the undersides of the lead elements proximate the adhesive to accommodate filler particles lodged between the leads and the active surface of the die during transfer molding of a plastic encapsulant. The increased space created by the slots and flexure in the leads about the slots reduces point stresses on the active surface of the die by the filler particles. The increased flexure in the leads about the slots further enhances the locking of the leads in position with respect to the die.

Stress reduction feature for LOC lead frame

Methods for stress reduction feature for LOC lead frame

A 16 megabit (2 ) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.

Method of making a single-deposition-layer-metal dynamic random access memory

Hybrid frame with lead-lock tape

Single deposition layer metal dynamic random access memory

A heat sink for a quad flat package comprises a heat-radiating plate and a plurality of removable bumpers attached to the plate. An area of reduced thickness is disposed at the junction between each bumper and the plate to facilitate removal of the plurality of bumpers from the plate. Preferably, each bumper includes an alignment feature for engaging a complementary feature formed on one of a mounting substrate and a test fixture.

Removable heat sink bumpers on a quad flat package

A 16 megabit (2,) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.

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Boise, ID, United States of America

Timothy J Allen