Globalfoundries U.S. Inc.

Tim H Lee

Vincent James McGahay

Ju Jin An

Craig R Gruszecki

Todd J Van Kleeck

Embodiments of the disclosure provide a method to form an air gap structure. An opening is formed in a first dielectric layer between adjacent conductors. A first dielectric layer is formed over the opening to fill a first portion of the opening. A remainder of the opening is free of the first dielectric layer. A second dielectric layer is formed on a top surface of the first dielectric layer, with a remainder of the opening unfilled. The second dielectric layer is devoid of wiring. The remainder of the opening below the second dielectric layer defines an air gap structure. A wiring layer is formed above the air gap structure.

Method to form air gap structure with dual dielectric layer

A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.

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Fishkill, NY, United States of America

Tim H Lee