Mosel Vitelic Corporation

Tien-min Yuan

Shih-Chi Lai

Kuang-Yung Wu

Jia-Rurng Hwu

Kuang-yung Wu

Chun-Liang Fan

Kuo-tsai Kao

Shih-chi Lai

Yao-Chi Chang

An object of the invention is to provide a preventive maintenance for effectively removing polymer stacked on a lower electrode within a reaction chamber of etching equipment during the process of dry etching of a silicon oxide layer. First, the lower electrode is preferably set at 0&deg; C., and then the reaction chamber is pre-cleaned preferably 20 times by a pump/purge cleaning manner. After the pre-cleaning, nitrogen or inert gas is supplied into the reaction chamber such that the internal pressure is equal to atmospheric pressure. Subsequently, the reaction chamber is opened preferably for 10 minutes, and the lower electrode is kept at 0&deg; C. during this moment. Afterwards, the surface of the lower electrode is wiped by a piece of clean cloth to peel off the polymer. Finally, the lower electrode is preferably set at 25&deg; C. and is wiped several times by using de-ionized water, isopropanol (IPA), ethanol, a solution of hydrogen peroxide in water, or Cleaner 5060 produced by the 3M corporation. According to the invention, the surface of the lower electrode does not suffer scratches and damage caused by a scraper. Therefore, the lifespan of the lower electrode is increased and the stability of the etching process is successfully enhanced.

Method for removing polymer stacked on a lower electrode within an etching reaction chamber

A method for polysilicon etching with HBr, He and He/O,as reactive gas source is disclosed. A chamber pressure greater than 30 mTorr is held to achieve high selectivity to polysilicon over silicon oxide. A total flow rate of HBr and He greater than 420 sccm is provided. Under this condition of the total flow rate of HBr and He, the flow rates of HBr and He are respectively held in the range of about 180-280 sccm, and the flow rate of He/O,is at about 5-10 sccm.

Silicon etching process

A method for preventing corrosion and particulate in a load-lock chamber is disclosed. The load-lock chamber is adjourning with an etching chamber and a wafer transferred module, each time a wafer in the cassette is transferred into the etching chamber for etching by a transfer arm. After that, the etched wafer is withdrawn by the same way to the cassette. The load-lock chamber comprising an outlet of N,-purge tube therein for venting the vacuum in the load-lock chamber to the surrounding. The method comprising at least a step of coupling heating means to the N,-purge tube, or heating N,gases before injecting into the N,-purge tube so that the temperature of the N,-purge tube will at least not lower than the temperature of an environment within the load-lock chamber.

Method to reduce the particles in load-lock chamber

A method of forming a trench power metal-oxide semiconductor (MOS) transistor over a semiconductor substrate is proposed in the present invention. First, a pad oxide layer is formed on said substrate, a masking layer is then formed on the pad oxide layer. Next, the masking layer and the pad oxide layer are defined the trench pattern, and the substrate is etched to form the trench structure. A gate oxide layer is formed on the outer surface of the trench structure. Then, a conducting layer is fill into said trench structure for serving as a gate structure. The doped areas are formed in the substrate to serve as source structures. Next, the sidewall spacers are formed on sidewalls of the masking layer and the pad oxide layer. A field oxide layer is then formed on the conducting layer.

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Taipei, Taiwan

Tien-min Yuan