Chinese Academy of Sciences

Tie Lin

Hong Shen

Junhao Chu

Xiangjian Meng

Jianlu Wang

Xudong Wang

Yan Chen

Jingjing Liu

Xinning Huang

Guangjian Wu

Hanxue Jiao

Tianle Guo

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

Method for in-situ modification of mercury quantum dots in traditional thermal injection process

Disclosed are a mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector and a preparation method thereof. The structure of the detector from bottom to top comprises a substrate, a mercury cadmium telluride material, an insulating layer, a two-dimensional semiconductor black phosphorus, and metal electrodes. First, growing the mercury cadmium telluride material on the substrate, removing part of the mercury cadmium telluride by ultraviolet lithography and argon ion etching, filling with aluminum oxide as the insulating layer using an electron beam evaporation method, transferring the two-dimensional semiconductor material black phosphorus at the junction of mercury cadmium telluride and an insulating layer assisted by a polypropylene carbonate film, and preparing the metal source-drain electrodes by electron beam lithography technology combined with the lift-off process to form the mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector.

Mercury cadmium telluride-black phosphorous van der waals heterojunction infrared polarization detector and preparation method thereof

A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WSby using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state ('1') and an off state ('0') of the memory respectively, and accordingly the purpose of storage is achieved.

Ferroelectric domain regulated optical readout mode memory and preparing method thereof

An ultra-broad spectrum detector integrated with functions of a two-dimensional semiconductor and a ferroelectric material, where the device includes a substrate, a two-dimensional semiconductor, a source electrode, a drain electrode, a ferroelectric material and a gate electrode; the two-dimensional semiconductor, the source electrode and the drain electrode are arranged on an upper surface of the substrate, and the source electrode and the drain electrode are respectively arranged at two ends of an upper surface of the two-dimensional semiconductor; two sides of the two-dimensional semiconductor are respectively connected with the lower-layer metal of the source electrode and the lower-layer metal of the drain electrode; the ferroelectric material is arranged on the upper surfaces of the two-dimensional semiconductor, the source electrode and the drain electrode; and the lower surface of the gate electrode is connected with the upper surface of the ferroelectric material.

Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

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Shanghai, China

Tie Lin