Lam Research Corporation

Tianhua Yu

Sanjay Gopinath

Xiaolan Ba

Ruopeng Deng

Juwen Gao

Novy Sastrawati Tjokro

Sema Ermez

Pragna Nannapaneni

Michal Danek

Jeong-Seok Na

Yu Pan

Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

Tungsten deposition

Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

Rapid flush purging during atomic layer deposition

Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

Atomic layer deposition on 3D NAND structures

Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400&#xb0; C. using cobalt-containing precursors.

Method for void-free cobalt gap fill

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Tracy, CA, United States of America

Tianhua Yu